Allicdata Part #: | 497-10306-5-ND |
Manufacturer Part#: |
STP22NM60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 16A TO-220 |
More Detail: | N-Channel 600V 16A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | STP22NM60N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP22NM60N is a N-channel 800V Power Transistor from SGS-Thomson Microelectronics. It is also known as an STP22NM60N-1, or STP22NM60N-FP. The STP22NM60N is used in various applications and is a popular choice for power conversion and amplifying operations. With an integrated heat sink, the transistor can handle power up to 500W. It is also capable of handling very high frequencies, due to its low gate to source and gate to drain capacitance.
The STP22NM60N is primarily used in power electronic applications, such as power conversion, AC/DC voltage regulators, DC/DC converters, transistor switches, and power amplifiers. Its high voltage and power handling capacity makes it suitable for many different commercial and industrial applications. The STP22NM60N is also used in home appliances, industrial equipment, audio amplifiers, and motor control and DC motor speed control.
The STP22NM60N is a N-channel MOSFET (metal-oxide-semiconductor field effect transistor). It belongs to the family of insulated-gate field effect transistors, or IGFETs. The transistor consists of a gate, drain, and source and operates like a switch, controlling the current flow between the drain and source. The transistor is able to turn on, or ‘gate’, when there is a voltage applied to the gate. The gate voltage determines how ‘on’ or ‘off’ the transistor is.
The STP22NM60N has a maximum voltage rating of 800V, a maximum current rating of 32A, and a maximum power rating of 500W. It has an operating temperature range of -55°C to 150°C and an insulation soundness of up to 6.5kV/μs. The transistor also has a low gate to source and gate to drain capacitance which makes it suitable for high frequency applications.
The STP22NM60N has a very low gate charge and drain-source resistance, which helps it to switch fast and reduce the losses due to resistance. This makes it a good choice for high power applications that require high efficiency. The STP22NM60N also has a high junction temperature rating, making it a good choice for applications where higher temperatures are expected.
The STP22NM60N can be used in many different applications and is a popular choice for power conversion and amplifying applications. Its high voltage, current and power capability, make it suitable for a wide range of commercial and industrial applications. With its low gate charge and drain-source resistance, it is suitable for high-power applications that require high efficiency. Its low gate-to-drain and gate-to-source capacitance adds to its usefulness in high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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