Allicdata Part #: | 497-6740-5-ND |
Manufacturer Part#: |
STP22NS25Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 250V 22A TO-220 |
More Detail: | N-Channel 250V 22A (Tc) 135W (Tc) Through Hole TO-... |
DataSheet: | STP22NS25Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 151nC @ 10V |
Series: | MESH OVERLAY™ |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP22NS25Z is a single-source, low-voltage, logic-level p-channel MOSFET (metal oxide semiconductor field effect transistor). The device is housed in an eight-lead, dual inline package (DIP). It is designed to be used in low-voltage applications, such as interfacing computer logic, controlling field-effect transistors, and driving relays.
This MOSFET is composed of a source, gate, and drain. The source of the device is connected to the drain and produces a voltage potential across the two terminals. The gate is an insulated region between the source and the drain that controls the conductivity of the channel between the two terminals. The current flow in the channel can be affected by the gate voltage, making this device an ideal switch.
The STP22NS25Z has a maximum drain-source voltage rating of -25 volts and a drain current (ID) rating of -17.5 amps. This device is commonly used in applications that require low-voltage switching, such as audio amplifiers, power supplies, and motor control applications. The device also has a low “on-resistance” rating, which results in a low voltage drop across the drain and source terminals when the switch is turned on.
The STP22NS25Z is also characterized as having a low “gate-threshold voltage.” This means that a low voltage can be applied to the gate to turn the device on. The device also has a high “gate-drain capacitance.” This means that the charge stored in the gate will not dissipate quickly, making this device suitable for applications that require high switching speeds.
The STP22NS25Z is a versatile MOSFET that can be used in a variety of applications. It is often used in digital logic applications, such as gates and flip-flops. It is also used in power switching applications that require high current handling, such as motor controls and DC-DC converters.
The STP22NS25Z is an efficient and reliable device in low-voltage applications. Its low “on-resistance” rating allows it to produce a low voltage drop across the drain and source terminals, while its low “gate-threshold voltage” makes it easy to turn the device on. In addition, its high “gate-drain capacitance” allows it to switch quickly. The STP22NS25Z is a low-voltage, logic-level, single-source p-channel MOSFET and is suitable for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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