Allicdata Part #: | 497-16319-5-ND |
Manufacturer Part#: |
STP23N80K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 16A |
More Detail: | N-Channel 800V 16A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | STP23N80K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STP23N80K5 is a single N-channel MOSFET device designed for use in a variety of applications. This versatile MOSFET is suitable for use in low to medium power applications such as motor control, DC-DC converters, and audio switching.
STP23N80K5 is an N-channel MOSFET manufactured using STMicroelectronics unique silicon-on-insulator (SOI) manufacturing process. This SOI process allows for a mobile substrate for optimal performance. The STP23N80K5 can be used in a wide range of applications since it can handle both low and high voltage applications and is suitable for use in both analog and digital designs.
The STP23N80K5 is also known as a "super-junction" MOSFET, which is a type of advanced MOSFET device. Super-junction MOSFETs are capable of providing superior performance over traditional types of MOSFETs due to their ability to reduce the channel resistance and maintain a low threshold voltage, which allows them to handle high current densities with minimal voltage drop.
In terms of working principle, the STP23N80K5 works similarly to other MOSFETs. When the gate voltage is lower than the source voltage, the device is off, and no current can flow from the drain to the source. When the gate reaches the threshold voltage, the device becomes on and a current can flow from drain to source. The amount of current that can the device can pass depends on the size of the channel and the gate-source voltage.
The STP23N80K5 can be used in a variety of application fields, including motor control, DC-DC converters, audio switching, power management solutions, and more. It can also be used in low-noise analog applications since it has a drain-source resistance of 11ohms.
The STP23N80K5 is an excellent choice for applications that require reliable performance with low power consumption. Its small footprint makes it ideal for use in space-constrained settings. Furthermore, this device can handle high switching speeds, making it suitable for high power applications where fast switching times are required.
The STP23N80K5 is a robust MOSFET device with a wide range of application fields. Its high efficiency and low power consumption make it ideal for use in applications where size and power consumption are critical. Furthermore, its advanced super-junction construction provides superior performance in high current applications. With its versatile capabilities, this device is an excellent choice for designers in need of a reliable MOSFET.
The specific data is subject to PDF, and the above content is for reference
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