STP240N10F7 Allicdata Electronics
Allicdata Part #:

497-13588-5-ND

Manufacturer Part#:

STP240N10F7

Price: $ 2.59
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 100V 180A TO220
More Detail: N-Channel 100V 180A (Tc) 300W (Tc) Through Hole TO...
DataSheet: STP240N10F7 datasheetSTP240N10F7 Datasheet/PDF
Quantity: 1000
1 +: $ 2.59000
10 +: $ 2.51230
100 +: $ 2.46050
1000 +: $ 2.40870
10000 +: $ 2.33100
Stock 1000Can Ship Immediately
$ 2.59
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
Series: DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

The STP240N10F7 is a high power N-channel Field Effect Transistor (FET) manufactured by STMicroelectronics. This FET is able to withstand a wide range of temperatures and has low on-resistance, making it ideal for use in a variety of applications.

Applications

The STP240N10F7 is typically used in applications where high power is necessary, such as power supplies, motor control and other switching applications. It can also be used in high-efficiency amplifier circuits, in power transistor applications, and for automotive applications such as HVAC systems and EV charger systems.

The STP240N10F7 is capable of operating at high temperatures, allowing it to be used in harsh environments and in applications that require a large amount of power.

Working Principle

The STP240N10F7 operates by using an N-channel MOSFET to act as a switch. When a voltage is applied to the gate (G) of the FET, an electric field is created which attracts the electrons in the N-channel and allows them to flow to the drain (D). This results in a current flowing between G and D, allowing the load to be controlled.

The STP240N10F7 also has an on-resistance rating of 240mΩ. This means that it has a very low resistance when the voltage between the gate and source (S) is applied. This allows for high switching frequencies and current handling capabilities. The STP240N10F7 also has a high maximum drain-source voltage (Vdrm) rating of 700V, allowing it to handle high voltages without damage.

Conclusion

The STP240N10F7 is a high power N-channel FET that is ideal for applications requiring high power and temperature operation. It has a low on-resistance rating and can handle high voltages. This makes it well-suited for use in high-efficiency amplifiers, power supplies, motor control systems, and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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