| Allicdata Part #: | 497-13556-5-ND |
| Manufacturer Part#: |
STP24N60M2 |
| Price: | $ 3.17 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 18A TO-220 |
| More Detail: | N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-... |
| DataSheet: |  STP24N60M2 Datasheet/PDF |
| Quantity: | 132 |
| 1 +: | $ 3.17000 |
| 10 +: | $ 3.07490 |
| 100 +: | $ 3.01150 |
| 1000 +: | $ 2.94810 |
| 10000 +: | $ 2.85300 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | MDmesh™ II Plus |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 9A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STP24N60M2 is a high voltage MOSFET suitable for use in a range of power management systems. Due to its unique features and low on-resistance, it is ideal for use in high-voltage applications such as HVAC, solar and UPS systems. It is also suitable for automotive, industrial and communications applications.
The STP24N60M2 is a N-channel enhancement mode MOSFET device and it belongs to the "Single" category of MOSFETs. As an N-channel device, the STP24N60M2 will have a "gain" or amplification benefit, allowing for better control over the power management system.
The STP24N60M2 has a maximum drain-source voltage rating of 600V, which offers high robustness and reliability. This makes it suitable for voltage applications and high-power switching systems. The maximum current it can handle is 24A, giving it a power (dissipation) rating of 64W. The device has a low on-resistance of 0.060ohms, which is beneficial in controlling current in power management systems.
The STP24N60M2 has been designed to operate in high temperature environments. It has an operating temperature of -55°C to +175°C in certain conditions. The device also has a low operating capacitance, making it suitable for high-speed switching applications. It also has a breakdown voltage of 900V, providing enhanced protection against electrical overloads.
The STP24N60M2 is used in a wide variety of power management applications. It can be used for high-voltage applications such as HVAC, solar and UPS systems. It is also used in automotive, industrial and communication systems. The device can also be used in power supply, inverters, and high-power switching systems. The device can also be used in power converters, power supplies and voltage regulators.
The STP24N60M2 works by controlling the flow of electric current in a power management system. It is an enhancement mode MOSFET, meaning that the electric current is controlled by a gate voltage. When a positive voltage is applied to the gate, the channel between the source and drain opens, allowing the electric current to flow. When the gate voltage is removed, the channel closes and the current flow stops.
The STP24N60M2 is a versatile and robust device, suitable for a variety of power management systems. Its low on-resistance, high-temperature rating and high-voltage rating make it a valuable component in many power management systems. It is also suitable for use in high-power switching systems and voltage applications which require a reliable and robust solution.
The specific data is subject to PDF, and the above content is for reference
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