STP24NM60N

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The STP24NM60N is a Power MOSFET device. This is a power MOSFET device that is made from silicon, and is specifically designed for use in high power applications. It is built with silicon N-Channel MOS technology that can handle a maximum operating voltage of 600V, a drain-source breakdown voltage of 640V and a current limit of 1.2K A.

The STP24NM60N is a horizontal power MOSFET device. It has a body size of 5 mm x 6 mm and it has a drain-source on-resistance of 19 mΩ. This device is ideal for use in power amplification applications, power converters, power switching and more. It has an RDS on value of 19 mΩ and the gate threshold voltage of this device is 1.3 volts.

The STP24NM60N has a very low input capacitance and total gate charge rate, making it ideal for use in high frequency and high efficiency systems. The device also has a very low gate charge and a low gate-source voltage drop. In addition, it has a low internal drain-source ON-resistance, which makes it very suitable for high current applications.

The STP24NM60N is commonly used in a wide range of applications. These include computers and imaging, automotive, industrial, power management, and aerospace and defense applications. It can be used in motor controllers, buck and boost converters, automotive engine control modules, precision rectifiers, audio power amplifiers, telecom power products, power amplifiers and more.

The working principle of the STP24NM60N is that of a MOSFET, which is a type of field effect transistor. It is a type of transistor in which the conductivity of its channel is controlled by the applied electric field. In other words, the STP24NM60N is a device in which the conduction and switching functions of the device can be controlled by the gate voltage and the gate current. An increase in the gate voltage or the gate current will increase the conduction in the channel region of the device, making it easier for the current to flow through the drain source.

The STP24NM60N has a high current carrying capacity, high efficiency and low losses. The device has a low switching speed, high output power and a low operating temperature. It is suitable for use in many different types of applications, as it has a wide range of voltage ratings, current ratings and operating temperature limits. This makes it a very versatile device, and one that can be used in a variety of applications.

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