STP24NM65N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP24NM65N is a Power MOSFET N Channel enhancement mode transistor manufactured by STMicroelectronics. It is a highly reliable and robust device, making it suitable for a variety of applications including audio amplifiers, power supplies, lighting systems and other consumer and industrial applications. Its key features include an extremely low on-resistance RDS(on) of 4.5 mΩ, a high switching speed and a low input capacitance. The device also features a low gate to source leakage current, as well as a wide operating temperature range from -55°C to +150°C.

The STP24NM65N belongs to the Single type of Field-effect Transistors (FETs), which are semiconductor devices that use an electric field to control the flow of current. The FET consists of a source, drain and gate, and is usually constructed from n-type and p-type material. The source and drain are responsible for providing and controlling the output current, while the gate serves as an input to the FET, controlling the amount of current that is allowed to flow between the source and the drain.

Power MOSFETs are Voltage-controlled FETs, meaning that the device can be triggered by a threshold voltage that must be applied to the gate in order to turn the device on. Upon applying this gate voltage, charge carriers (electrons and holes) are attracted to the junction between the source and the drain, allowing a controlled flow of current between them. As the gate voltage increases, the amount of current that can be passed through the MOSFET also increases, allowing the device to operate at higher switching speeds than regular FETs.

The main advantage of using a Power MOSFET over a regular FET is its ability to be used in higher power applications, thanks to its low on-resistance value (RDS(on)). The lower RDS(on) value means that the Power MOSFET is able to pass a higher amount of current without heating up or burning out, making it suitable for higher power applications such as motor control and power switching. The STP24NM65N\'s low RDS(on) value, combined with its high switching speed and wide operating temperature range makes it well suited for power switching applications such as inverters, converters, and DC-DC converters.

The STP24NM65N also features a low input capacitance, making it suitable for high frequency applications. Its low input capacitance also ensures that the device is not affected by high frequency noise, making it more reliable and robust in such applications. The low gate to source leakage current also ensures that the device can be operated with confidence, as it prevents any unwanted current leakage between the gate and the source.

In conclusion, the STP24NM65N is a highly reliable and robust Power MOSFET transistor from STMicroelectronics. Its low on-resistance RDS(on) combined with its wide operating temperature range and high switching speed makes it well suited for motor control, power switching, inverters, converters and other high power applications. Its low input capacitance and low gate to source leakage current also make it suitable for high frequency applications, ensuring that the device is not adversely impacted by high frequency noise. Thus, the STP24NM65N is an ideal choice for a variety of applications where reliability, robustness and power efficiency are paramount.

The specific data is subject to PDF, and the above content is for reference