STP25NM60ND Allicdata Electronics
Allicdata Part #:

497-8446-5-ND

Manufacturer Part#:

STP25NM60ND

Price: $ 5.23
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 21A TO-220
More Detail: N-Channel 600V 21A (Tc) 160W (Tc) Through Hole TO-...
DataSheet: STP25NM60ND datasheetSTP25NM60ND Datasheet/PDF
Quantity: 367
1 +: $ 5.22900
10 +: $ 5.07213
100 +: $ 4.96755
1000 +: $ 4.86297
10000 +: $ 4.70610
Stock 367Can Ship Immediately
$ 5.23
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP25NM60ND is a type of N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET). These devices are used in a variety of applications, including audio amplifiers, power supplies, motor control, and switching power transistors. It is a single insulated-gate bipolar transistor (IGBT).

The STP25NM60ND is a high-speed power switching device, designed specifically for driving large currents. It has a maximum operating voltage of 600 volts, with an Rds(on) value of 0.072 Ω and a maximum drain current of 25 Amps. The device is highly efficient and designed to withstand extreme temperature ranges. It is especially suited for applications in the automotive, renewable energy, and industrial automation markets.

The STP25NM60ND has a number of advantages over traditional transistors, such as higher switching speeds, lower power consumption, and better control of the output current. It is also widely used in motor control and power conversion applications. The device is a cost-effective solution for switching large currents with maximum precision.

The STP25NM60ND works by controlling the flow of current through an insulated-gate. It is composed of an N-channel FET and a P-channel FET. When a voltage is applied to the gate terminal, it creates an electric field which controls the current through the device, allowing for precise and efficient current control. Additionally, the device is designed to withstand high temperature operation. The high frequency performance of the STP25NM60ND makes it ideal for high speed switching applications such as audio amplifiers, motor control and power supplies.

The STP25NM60ND operates with a low gate threshold voltage (Vgs) of 3V. This low Vgs enables the device to operate over a wide range of current levels, with excellent conductivity and high switching speeds. The device also has very low gate resistance (Rg) which enables it to provide fast switching speeds and optimal control of the output current.

The STP25NM60ND is a cost-effective solution for driving high currents in applications requiring high switching speeds. Its flexibility and compatibility with a wide range of circuit topologies makes it a versatile choice for a variety of applications. The device is available in both through-hole and surface mount packages.

The specific data is subject to PDF, and the above content is for reference

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