Allicdata Part #: | 497-11230-5-ND |
Manufacturer Part#: |
STP260N6F6 |
Price: | $ 2.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 120A TO220 |
More Detail: | N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | STP260N6F6 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.33289 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 183nC @ 10V |
Series: | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP260N6F6 Application Field and Working Principle
STP260N6F6 is a 6.0A, 60V N-channel low RDS(ON) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ST Microelectronics. It is suitable for applications such as compact power applications, automotive and industrial applications and switch-mode power supply.
MOSFETs are typically used for either power amplification or switching applications. In power amplification, the MOSFET is used as an amplifier, allowing a large signal, usually from a microcontroller, to control a small signal, usually from a power source. In a switching application, the MOSFET is used to switch a large current or voltage on or off. In both applications, the STP260N6F6’s low RDS(ON) gives superior performance as well as improved efficiency.
The STP260N6F6 is a single N-channel MOSFET and is an optimized device for power applications. The MOSFET consists of a source, a drain, a gate and a gate oxide layer between the source and drain. In an N-type MOSFET, current flows through the drain-to-source path when voltage is applied between the gate and source. The gate oxide layer acts as an electrically insulator, blocking current between the gate and source. When a positive voltage is applied between the gate and source, it creates an electric field that causes electrons to move from the oxide layer to the gate and the drain-to-source path is created. The current flow is determined by the voltage applied between the gate and the source and by the resistance of the drain-to-source path.
The electrical characteristics of the device are very important in order to predict its performance. The STP260N6F6 has a typical on-resistance RDS(ON) of 28 mΩ, at a 10V gate drive. It also has a low gate threshold voltage (Vth) of 2.2V. These characteristics make the STP260N6F6 an ideal device for switching applications.
The STP260N6F6 is also extremely fast switching and is suitable for high-frequency switching applications. It is also tolerant to voltages up to 125V, making it suitable for high-voltage applications.
In addition to its excellent electrical characteristics, the STP260N6F6 is also RoHS compliant. RoHS stands for Restrictions on Hazardous Substances, and refers to regulations that limit the use of hazardous materials in electronic products.
The STP260N6F6 is a versatile device that can be used in a variety of applications such as high-frequency switching, power supplies, motor control, and more. Its low RDS(ON) makes it ideal for power applications, while its low gate threshold voltage makes it ideal for switching applications. Its RoHS compliance and fast switching speed make it an attractive choice for any application.
The specific data is subject to PDF, and the above content is for reference
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