Allicdata Part #: | 497-14219-5-ND |
Manufacturer Part#: |
STP26NM60ND |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21A TO220 |
More Detail: | N-Channel 600V 21A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | STP26NM60ND Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1817pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 54.6nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
When it comes to power control applications, the use of transistors is an essential part of the equation. The STP26NM60ND is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is a commonly used transistor in those applications. It is a special type of transistor known as an “enhancement mode” transistor. The STP26NM60ND is a 300V N-Channel enhancement mode MOSFET.
MOSFETs are transistors that are constructed with a gate, a source and a drain, instead of the typical emitter, base and collector of an ordinary transistor. These transistors are particularly useful in power control applications, as they offer superior switching speed, better efficiency and reduced power dissipation compared to bipolar transistors.
The STP26NM60ND MOSFET has a number of advantages over other types of transistors. First, it has an extremely low gate charge, which makes it ideal for high-speed switching applications. Additionally, it has a low on-resistance rating, making it perfect for use in applications requiring high current. Finally, it has a high operational junction temperature of 175°C, as well as a high temperature range of -55°C to +175°C.
The STP26NM60ND is widely used in power control applications, such as automotive, appliance, industrial and telecommunications systems. It is a versatile transistor, capable of handling various power requirements, from small-scale applications to larger-scale projects. The STP26NM60ND can be used in applications such as motor control, power switching, and power-triggering power supplies.
In terms of its working principle, the MOSFET is, as previously mentioned, an enhancement-mode device. It is constructed with a control gate that is connected to the source and drain. When a voltage is applied to the gate, a current is allowed to flow, allowing conduction between the source and drain.
The MOSFET can also function as a voltage regulator by allowing a specific amount of current to flow by adjusting the applied voltage. Additionally, it can be used in combination with other components, such as transistors and diodes, to create more complex circuitry.
Ultimately, the STP26NM60ND is a versatile and powerful MOSFET, ideal for high-power applications. It is a reliable, efficient and cost-effective transistor, capable of handling a variety of tasks. From small to large-scale projects, the STP26NM60ND provides the necessary performance for a wide range of power control applications.
The specific data is subject to PDF, and the above content is for reference
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