
Allicdata Part #: | 497-14196-5-ND |
Manufacturer Part#: |
STP28NM60ND |
Price: | $ 4.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 23A TO220 |
More Detail: | N-Channel 600V 23A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 30 |
1 +: | $ 4.49190 |
10 +: | $ 4.35714 |
100 +: | $ 4.26730 |
1000 +: | $ 4.17747 |
10000 +: | $ 4.04271 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2090pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 62.5nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP28NM60ND is an N-channel power Mosfet designed for applications such as power switching, high current amplifiers, and DC to DC converters. This is a popular choice for applications requiring high performance in both low and high power environments.
The STP28NM60ND is a general-purpose N-channel MOSFET with a maximum drain-source voltage of 600V, a maximum drain current of 28A and a maximum gate-source voltage of 20V. It has excellent rapid switching characteristics and low Rds(on) characteristics compared to other MOSFETs including higher power MOSFETs.
The STP28NM60ND has different ratings depending on the application. There is a voltage rating of 50V, a current rating of 2.3A and a power rating of 1W. The device can operate at temperatures up to 200°C and withstands a surge current of 96A.
The STP28NM60ND also has a Pb-free lead-frame plating finish, making it suitable for lead-free soldering processes. It is RoHS compliant, meaning that it is free of toxic substances.
The working principle of the STP28NM60ND is based on the n-channel enhancement mode. When the gate is not charged, the drain-source resistance is at its maximum and no current can flow through the MOSFET. Once a voltage is applied to the gate, a current flows and the resistance between the drain and source decreases, allowing the current to flow.
The STP28NM60ND is most commonly used in high current power switching applications, DC to DC converters, and oscillator circuits. It can also be used for PFC applications for motor driver circuits and motor control. The device is well suited for high frequency switching and offers very low switching times.
The STP28NM60ND also has excellent thermal properties, which enable it to operate in high temperature environments, making it suitable for applications such as high power motors and power supplies.
The STP28NM60ND is a popular choice for applications that require high performance in both low and high power environments because of its low Rds(on) rating, excellent rapid switching characteristics, and good thermal properties. Its Pb-free lead-frame plating finish makes it environmentally friendly and its RoHS compliance ensures that its components do not contain dangerous substances such as lead.
The specific data is subject to PDF, and the above content is for reference
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