STP28NM60ND Allicdata Electronics
Allicdata Part #:

497-14196-5-ND

Manufacturer Part#:

STP28NM60ND

Price: $ 4.49
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 23A TO220
More Detail: N-Channel 600V 23A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STP28NM60ND datasheetSTP28NM60ND Datasheet/PDF
Quantity: 30
1 +: $ 4.49190
10 +: $ 4.35714
100 +: $ 4.26730
1000 +: $ 4.17747
10000 +: $ 4.04271
Stock 30Can Ship Immediately
$ 4.49
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 150 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP28NM60ND is an N-channel power Mosfet designed for applications such as power switching, high current amplifiers, and DC to DC converters. This is a popular choice for applications requiring high performance in both low and high power environments.

The STP28NM60ND is a general-purpose N-channel MOSFET with a maximum drain-source voltage of 600V, a maximum drain current of 28A and a maximum gate-source voltage of 20V. It has excellent rapid switching characteristics and low Rds(on) characteristics compared to other MOSFETs including higher power MOSFETs.

The STP28NM60ND has different ratings depending on the application. There is a voltage rating of 50V, a current rating of 2.3A and a power rating of 1W. The device can operate at temperatures up to 200°C and withstands a surge current of 96A.

The STP28NM60ND also has a Pb-free lead-frame plating finish, making it suitable for lead-free soldering processes. It is RoHS compliant, meaning that it is free of toxic substances.

The working principle of the STP28NM60ND is based on the n-channel enhancement mode. When the gate is not charged, the drain-source resistance is at its maximum and no current can flow through the MOSFET. Once a voltage is applied to the gate, a current flows and the resistance between the drain and source decreases, allowing the current to flow.

The STP28NM60ND is most commonly used in high current power switching applications, DC to DC converters, and oscillator circuits. It can also be used for PFC applications for motor driver circuits and motor control. The device is well suited for high frequency switching and offers very low switching times.

The STP28NM60ND also has excellent thermal properties, which enable it to operate in high temperature environments, making it suitable for applications such as high power motors and power supplies.

The STP28NM60ND is a popular choice for applications that require high performance in both low and high power environments because of its low Rds(on) rating, excellent rapid switching characteristics, and good thermal properties. Its Pb-free lead-frame plating finish makes it environmentally friendly and its RoHS compliance ensures that its components do not contain dangerous substances such as lead.

The specific data is subject to PDF, and the above content is for reference

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