STP2N62K3 Allicdata Electronics
Allicdata Part #:

497-12612-5-ND

Manufacturer Part#:

STP2N62K3

Price: $ 1.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 620V 2.2A TO220
More Detail: N-Channel 620V 2.2A (Tc) 45W (Tc) Through Hole TO-...
DataSheet: STP2N62K3 datasheetSTP2N62K3 Datasheet/PDF
Quantity: 1635
1 +: $ 0.96390
10 +: $ 0.85365
100 +: $ 0.67454
500 +: $ 0.52309
1000 +: $ 0.41297
Stock 1635Can Ship Immediately
$ 1.06
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 620V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STP2N62K3 is a N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is comprised of a self-isolating vertical structure built on a silicon substrate. As with all MOSFETs, it is an efficient three-terminal semiconductor device that helps to control the flow of electric current with a low voltage on the Gate terminal. It is a high power transistor device and can be used for a variety of applications such as audio amplifiers, load switches, and hot-swap circuits.

The STP2N62K3 has an enhanced breakdown voltage of 600V and a drain current rating of 44A. It offers superior performances such as low gate capacitance and low switching noise, all while providing high-speed switching and high-speed power conversion. In addition, it features a low On-resistance of 18.7 millIohms in a tiny two-pin SOT-223 package, making it ideal for space constrained applications.

The working principle of the STP2N62K3 is based on the quantum-mechanical concept of current tunneling between two types of electrodes, the source and the drain. The voltage applied to the gate terminal of the MOSFET allows for the control of current flow between the source and drain by modulating the energy profile between them to produce either an open or closed and off/on switch.

The STP2N62K3 is suitable for a wide range of applications, particularly in the Automotive, Industrial, Telecommunications, Medical, and Home Entertainment markets. It is suitable for the control of various power-consuming components such as relays, motors, lamps and valves in such applications. In addition, it can also be used in audio amplifier circuits, DC-DC converters, power supplies, and high-voltage fused-cells.

In summary, the STP2N62K3 is a high voltage N-Channel Enhancement Mode MOSFET that is suitable for a variety of applications. It features a high breakdown voltage rating of 600V and a low On-resistance of 18.7 millIohms. The device relies on the quantum mechanical concept of current tunneling to control current flow between the source and drain, and its small two-pin SOT-223 package makes it ideal for space-constrained applications. Furthermore, the STP2N62K3 can be used for a variety of applications such as audio amplifiers, load switches, and hot-swap circuits.

The specific data is subject to PDF, and the above content is for reference

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