
Allicdata Part #: | 497-7529-5-ND |
Manufacturer Part#: |
STP65NF06 |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 60A TO-220 |
More Detail: | N-Channel 60V 60A (Tc) 110W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.34000 |
10 +: | $ 1.29980 |
100 +: | $ 1.27300 |
1000 +: | $ 1.24620 |
10000 +: | $ 1.20600 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP65NF06 is a 600V rated N-channel MOSFET manufactured by ST Microelectronics, a globally operating semiconductor company. It is a high-speed, low on-resistance device, making it ideal for a variety of applications. In this article, we will look at the common application fields and the operating principle of the STP65NF06.
Application Fields
The STP65NF06 has been designed for use in power factor correction, power supplies, motor controls, and any other application that needs regulated power inputs. It can also be used in the power side of an SMPS design. The ability to handle high-currents makes it ideal for use in automotive applications, such as starter motors. Its high switching speed and low capacity design makes it quite suitable for use in high-speed switching applications.
Working Principle
The STP65NF06 is an N-channel MOSFET, meaning that it consists of a source terminal, a drain terminal, and a conductive channel. The source and drain terminals are external connections while the channel is internal. The channel is made of a semiconductor material, commonly silicon, and the flow of electrons through this channel is what makes the device operational. An electric field is needed to start the flow of electrons though the channel. When a voltage is applied between the source and drain terminals, an electric field is created, which drives the electrons through the channel. The electric field also acts as an insulator, preventing current from flowing in the opposite direction.
The STP65NF06 is a high-speed device and this is derived from its low capacitance design. A capacitor is an electrical component that stores electrical charge. In a MOSFET, the capacitance is the ability of the device to store charge and the lower this capacitance is, the faster the device can switch. The STP65NF06 is designed with a low capacitance, allowing it to switch at high speeds.
Conclusion
The STP65NF06 is an ideal device for applications where fast switching, high-currents, or regulated power inputs are required. It is able to handle both high-currents and high-speed switching due to its low capacitance design. It can be used in applications such as power factor correction, power supplies, motor controls, and any other application that needs regulated power inputs.
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