STP65NF06 Allicdata Electronics
Allicdata Part #:

497-7529-5-ND

Manufacturer Part#:

STP65NF06

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 60A TO-220
More Detail: N-Channel 60V 60A (Tc) 110W (Tc) Through Hole TO-2...
DataSheet: STP65NF06 datasheetSTP65NF06 Datasheet/PDF
Quantity: 1000
1 +: $ 1.34000
10 +: $ 1.29980
100 +: $ 1.27300
1000 +: $ 1.24620
10000 +: $ 1.20600
Stock 1000Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP65NF06 is a 600V rated N-channel MOSFET manufactured by ST Microelectronics, a globally operating semiconductor company. It is a high-speed, low on-resistance device, making it ideal for a variety of applications. In this article, we will look at the common application fields and the operating principle of the STP65NF06.

Application Fields

The STP65NF06 has been designed for use in power factor correction, power supplies, motor controls, and any other application that needs regulated power inputs. It can also be used in the power side of an SMPS design. The ability to handle high-currents makes it ideal for use in automotive applications, such as starter motors. Its high switching speed and low capacity design makes it quite suitable for use in high-speed switching applications.

Working Principle

The STP65NF06 is an N-channel MOSFET, meaning that it consists of a source terminal, a drain terminal, and a conductive channel. The source and drain terminals are external connections while the channel is internal. The channel is made of a semiconductor material, commonly silicon, and the flow of electrons through this channel is what makes the device operational. An electric field is needed to start the flow of electrons though the channel. When a voltage is applied between the source and drain terminals, an electric field is created, which drives the electrons through the channel. The electric field also acts as an insulator, preventing current from flowing in the opposite direction.

The STP65NF06 is a high-speed device and this is derived from its low capacitance design. A capacitor is an electrical component that stores electrical charge. In a MOSFET, the capacitance is the ability of the device to store charge and the lower this capacitance is, the faster the device can switch. The STP65NF06 is designed with a low capacitance, allowing it to switch at high speeds.

Conclusion

The STP65NF06 is an ideal device for applications where fast switching, high-currents, or regulated power inputs are required. It is able to handle both high-currents and high-speed switching due to its low capacitance design. It can be used in applications such as power factor correction, power supplies, motor controls, and any other application that needs regulated power inputs.

The specific data is subject to PDF, and the above content is for reference

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