STP6N95K5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP6N95K5 is a high-performance P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Vishay Siliconix. It is a rugged, reliable semiconductor device that can be used in a wide range of power management applications. The device is capable of carrying up to a 21 A drain-source current, while maintaining anOn-State resistance of only 0.02Ω. This makes it a great choice for use as a power switch or signal-mixing amplifier.

Device Features

The STP6N95K5 is designed for a wide range of applications, from motor control to power supplies. Some of its features include:

• High current capability: Up to 21 amperes of drain-source current
• Low On-State resistance: Only 0.02Ω
• Low gate charge: Only 75 nC
• Low thermal resistance: Junction-to-case (R_th JC) of 18.9°C/W
• Operating temperature range: -55 to 175°C
• RoHS compliant package: Low-profile TO-252AA (DPAK)

The STP6N95K5 is also offered in a complementary N-channel version (STP2N95K5) for use in MOSFET-based power supply designs.

Device Applications

The STP6N95K5 can be used to build reliable and robust power management solutions for many different applications, such as motor control, battery management, load switching and current sensing. It can also be used for power supply switching, signal mixing, and protective circuits. Additionally, it is an excellent choice for systems with high demanding applications, such as those that require high-accuracy temperature control and power-on/off control.

Device Working Principle

MOSFETs, such as the STP6N95K5, are voltage-controlled devices that are composed of a metal-oxide semiconductor material between a source and a drain terminal. This material has a positive or negative charge applied to it, which affects the resistance between the source and the drain. When a small current is applied to the gate terminal of the device, it will induce a large decrease (or increase) in the resistance between the source and the drain, enabling the MOSFET to act as a switch or an amplifier.

The STP6N95K5 is a P-channel MOSFET, meaning that its metal-oxide layer has a positive charge applied to it when no gate voltage is applied. When the gates voltage is increased, a large decrease in resistance is observed between the source and the drain, allowing current to flow in one direction. This is known as a “pull-up” action, as it is the gate voltage that “pulls” the MOSFET up and allows current to flow.

Conclusion

The STP6N95K5 is a high-performance, P-Channel power MOSFET that is ideal for a wide variety of power management applications. Its features include a high current capability, low on-state resistance and low gate charge, making it an excellent choice for many high demanding applications. Additionally, its operating temperature range and low thermal resistance make it suitable for use in a wide range of conditions. The STP6N95K5 utilizes a voltage-controlled metal-oxide semiconductor to adjust the resistance between its source and drain terminals, allowing it to function as a switch or amplifier depending on the gate voltage.

The specific data is subject to PDF, and the above content is for reference