STQ3N45K3-AP

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	3.8 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	600mA (Tc)
Drain to Source Voltage (Vdss):	450V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Box (TB)

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Introduction

The STQ3N45K3-AP transistor is part of the STQ3N45K3 series of MOSFET transistors from STMicroelectronics. It is a power MOSFET transistor with an ultra-low on-resistance and is suitable for a wide variety of applications, including voltage generation, switching, driving, and power amplification. The following article will discuss the application fields and working principle of this transistor.

Application Fields

The STQ3N45K3-AP offers a variety of application fields. It is used in power management applications, such as DC-DC converters and switch-mode power supplies. Its low on-resistance is suitable for applications that require high power switching, such as motor control, LED lighting, and DC motor drives. The transistor is also used in slow-starting and shunting applications, and is suitable for large current and voltage driving applications such as telecommunication systems, computer programs, and power modules.The STQ3N45K3-AP is also useful for a variety of audio applications. It can be used in analog and digital signal processors, radio and television equipment, sound amplifiers, and audio power amplifiers, among other audio equipment.

Working Principle

The STQ3N45K3-AP is a power MOSFET transistor. It operates on the principle of field effect transistor (FET) technology, which uses a voltage applied to the gate to modulate the electric current flowing in the channel between the source and drain. This voltage produces an electric field which, in turn, draws or lifts electrons from the channel, resulting in a varying amount of current flow. This modulation allows the STQ3N45K3-AP to be used as a switch, controlling electric current flow in a certain direction.The STQ3N45K3-AP’s ultra-low on-resistance provides excellent current and voltage driving performance, enabling the transistor to handle high current and voltage applications. This ability makes the STQ3N45K3-AP excellent for high-performance power management and audio equipment.

Conclusion

The STQ3N45K3-AP is a versatile MOSFET transistor with a low on-resistance that is suitable for a variety of applications, including power management, voltage generation, switching, and audio equipment. Its FET technology allows it to be used as a switch to control electric current flow in a certain direction. The STQ3N45K3-AP is an excellent choice for high-performance power management and audio applications.

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