STS3DNE60L Allicdata Electronics
Allicdata Part #:

STS3DNE60L-ND

Manufacturer Part#:

STS3DNE60L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET 2N-CH 60V 3A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 3A 2W Surface ...
DataSheet: STS3DNE60L datasheetSTS3DNE60L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: STripFET™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The STS3DNE60L is a three-terminal MOSFET device that utilizes lateral double diffused MOS (DMOS) technology. It delivers a maximum current of up to 60A and lies in the range of voltage from 20V to 50V. This device is capable of operating with very low losses, making it suitable for use in many applications. It is designed for applications such as motor drivers, light dimmers, DC-DC converters, and power regulation.

The STS3DNE60L is composed of two MOSFETs in a single package. Its three terminals include the Gate, Drain and Source. It has two distinct benefits compared to other similar devices: it has a higher current capacity and a lower voltage rating. This makes it more suitable for applications such as motor drivers and light dimmers. It also has a much smaller package size than its counterparts, making it easier to incorporate into devices.

The STS3DNE60L has an operating gate threshold voltage of 4V, which means that it can be controlled with a low voltage signal. This is an advantage for applications such as light dimmers, where the input signal may be a small voltage. Another advantage of this device is its fast switching speed. It has a switching time of under 1 microsecond, which is faster than most other MOSFETs.

The STS3DNE60L has two distinct working principles, depending on the current flow direction. In the linear mode, drain current flows in the same direction as the gate current, and the STS3DNE60L behaves like a linear voltage regulator. In the saturation mode, drain current flows in the opposite direction of the gate current, and the STS3DNE60L behaves like an ordinary transistor. This versatility allows the STS3DNE60L to be used in a wide range of applications.

The STS3DNE60L can be used for a variety of applications, such as motor drivers, light dimmers and DC-DC converters. It is also suitable for use in power regulation systems, as it can be used as a switch or a voltage regulator. It is reliable and efficient, making it an ideal choice for power-sensitive applications. Furthermore, its small package size makes it easy to incorporate into devices.

< p>In conclusion, the STS3DNE60L is a three-terminal, laterally-diffused MOS (LDMOS) FET, capable of up to 60A current and 20V to 50V voltage range. It has a lower gate threshold voltage and faster switching speed compared to its counterparts, making it suitable for applications such as motor drivers and light dimmers. Its two distinct working principles allow it to be used as a switch or a voltage regulator. All these features make the STS3DNE60L an ideal choice for power-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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