STS3DPF60L Discrete Semiconductor Products |
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Allicdata Part #: | 497-4123-2-ND |
Manufacturer Part#: |
STS3DPF60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET 2P-CH 60V 3A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 60V 3A 2W Surface ... |
DataSheet: | STS3DPF60L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | ST*3DPF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 15.7nC @ 4.5V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 1.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STS3DPF60L is a semiconductor device containing an array of field effect transistors (FETs). It is made using advanced silicon process technology, which allows it to provide high performance and low power consumption. The STS3DPF60L can be used in a wide range of applications, including power electronics and electric drives, as well as digital logic and RF amplification. The device features an integrated power FET array and uses a 3D process for improved reliability, low on-state resistance, and high uniformity of on-state current. This makes STS3DPF60L ideal for switching and converter designs.
Working Principle
The STS3DPF60L contains 60 FETs arranged in an array. Each FET has a source, gate, and drain connection. When a voltage is applied to the gate, the FET behaves like a switch, turning the current between the source and drain either on or off. This ability to easily control current with a simple voltage input makes FETs and the STS3DPF60L an ideal choice for analog and digital driving circuits.
The STS3DPF60L contains an array of FETs arranged in five different topologies. Each topology has its own unique characteristics and can be used in different applications. The FETs are arranged in a parallel source configuration, which allows for high power handling, low power dissipation, and fast switching speeds. The device also features high voltage breakdown protection, low on-state resistance, and low gate capacitance.
The STS3DPF60L also features an integrated gate-drive circuit. This circuit helps to reduce power consumption and improves the overall performance of the device. The gate-drive circuit also helps to reduce EMI and provide accurate on/off control. The integrated circuit also reduces the number of external components required, which helps to reduce cost and complexity.
Application Field
The STS3DPF60L can be used in a wide range of applications including power electronics, electric drives, and digital logic. In power electronics, the device can be used for switching and control in converters, DC-DC, or AC-DC applications. In electric drives, the device can be used for motor control, current sensing and control, and speed control. In digital logic, the device can be used for logic gates, line drivers, and signal switching.
The STS3DPF60L is also used in RF amplification. The device is capable of providing high gain and low noise levels. The device is also able to provide high-speed linearity and reliable operation in harsh environments. The device is well suited for use in power amplifiers, radio transmitters, and receivers.
The STS3DPF60L is a very versatile device that can be used in a wide range of applications. The device is well suited for designs that require high performance, low power consumption, and reliable operation. The device is also well suited for applications that require fast switching, low on-state resistance, and high uniformity of on-state current.
The specific data is subject to PDF, and the above content is for reference
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