STS3P6F6 Discrete Semiconductor Products

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The STS3P6F6 is a single, Enhancement Mode Power MOSFET designed as a power switch. With a maximum drain source voltage of 100 V and a maximum drain current of 50 A, this N-channel MOSFET is well suited for high-power applications. It is manufactured using a high-reliability silicon epitaxial substrate. The STS3P6F6 is qualified for the automotive industry and is capable of withstanding temperatures of up to 175 °C.

The STS3P6F6 has a very low on-resistance, making it an ideal choice for high-current switching. The device also has an integrated reverse body diode with an effective reverse recovery time of 15 ns, making it suitable for high-frequency switching. Furthermore, it has a very low gate charge, making it ideal for low power circuit designs.

The STS3P6F6 is especially useful in applications such as motor drives, solar power inverters, uninterruptible power supplies, automotive powertrain applications, load switches, and AC-DC converters. The device is highly reliable and reliable and can be used in applications subject to harsh environments. As it is an N-channel MOSFET, it requires a low gate drive power, making it suitable for applications where power efficiency is a priority.

The STS3P6F6 is designed to work on either an AC or DC power source, making it a versatile and reliable switch. It features low Miller capacitance which results in reduced parasitic oscillations, making it suitable for high-frequency switching. It also features a low gate charge Qg which minimizes switching losses and increases power efficiency. The device also has a high Avalanche energy immunity, making it suitable for harsh operating environments.

The STS3P6F6 is an Enhancement Mode MOSFET, meaning that it operates by increasing its conductivity when voltage is applied to its Gate. When the voltage at the Gate is below the threshold voltage (Vth), it is in the \'OFF\' state. The voltage at the drain is equal to the supply voltage. When the voltage at the Gate is above the threshold voltage, the MOSFET is switched \'ON\', and current can flow through the drain-source junction. When the Gate voltage is removed, the MOSFET is switched \'OFF\' and no current flows.

The STS3P6F6 is a reliable switch and offers excellent power handling performance. With its low gate charge, reverse body diode, immesive avalanche energy immunity, and low on-resistance, it is an ideal choice for high power applications. It is suitable for automotive, aerospace, medical and industrial applications, and is an excellent choice for high-powered systems where high performance and reliability are required.

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