STS5DNF60L

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STS5DNF60L Application Field and Working Principle

STS5DNF60L is an integrated power MOSFET array, built with 2 N and 2 P-channel LDMOS transistors (LDMOS transistors stands for lateral double-diffused MOSFET transistors). STS5DNF60L offers superior performance in terms of power handling and high voltage capability, making it suitable for use in applications such as audio power amplifiers, motor drives and switched-mode power supplies.

The process used in the creation of the STS5DNF60L uses high performance LDMOS transistors, where source and drain contacts are formed on opposite sides of the semiconductor device. The metal-oxide-semiconductor (MOS) structure is n-type and uses the depletion mode, where changes in the voltage applied to the gate will cause the MOSFET to turn off rather than on. The depletion mode is especially useful for protection against ESD and other potentially damaging conditions.

The typical application field for the STS5DNF60L is for operation between a maximum of 25 volts and a minimum of 10 volts. The array combines two P-channel, depletion-mode MOSFETs and two N-channel, enhancement-mode MOSFETs and is ideal for use as a high-performance level-shifter due to its low on-resistance and low-resistance layout.

The operating body temperature range of the device is specified between -30°C and 150°C and is designed to be able to withstand high-temperature and ESD conditions. The junction temperature is limited to 175°C and the thermal resistance of the device is also specified as high.

The device also incorporates reverse blocking, which helps protect the internal components when subjected to a high reverse voltage. The reverse blocking capability of the device is specified as 40 volts and is therefore suitable for use in applications where high voltage protection is required. In addition, the on-state and off-state RDS(on) is also low, which allows for an efficient power transfer.

The switching of the STS5DNF60L array is controlled by an externally applied gate voltage. When a positive gate voltage is applied to the P-channel transistors, the N-channel transistors will remain off and when a negative gate voltage is applied to the N-channel transistors, the P-channel transistors will remain off. As the voltage on the gate is varied, the ratios of the P-channel and N-channel conductance can provide the desired level shift.

In conclusion, the STS5DNF60L is an integrated power MOSFET array, suitable for use in applications such as audio power amplifiers, motor drives and switched-mode power supplies. The device is highly effective in terms of power handling and high voltage capabilities and offers a cost-effective way of providing a level-shifting solution. Due to its low on-resistance and high holding voltage, the device is also extremely resistant to damage from electrical surges or short circuits.

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