STS5P3LLH6 Allicdata Electronics
Allicdata Part #:

497-15484-2-ND

Manufacturer Part#:

STS5P3LLH6

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 30V 5A 8SOIC
More Detail: P-Channel 30V 5A (Ta) 2.7W (Ta) Surface Mount 8-SO
DataSheet: STS5P3LLH6 datasheetSTS5P3LLH6 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.25358
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2.7W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: DeepGATE™, STripFET™ H6
Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STS5P3LLH6 Field Effect Transistor, commonly known as a MOSFET, is a type of single-gate, interruption-capable transistor. It provides high input impedance, high switch speed, low power losses, and high off-state-current performance. The lower on-state-resistance and fast switching speed allow for efficient heat dissipation in noisy digital circuits.

A MOSFET is an insulated-gate Field Effect Transistor (FET), which is a type of device that creates a solid-state barrier between two electrodes. Its basic operation is similar to an LED, where a charge accumulates at the gate and creates an electric field between the source and the drain. The MOSFET can be thought of as an electronic switch that is capable of interrupting a current in two directions. The STS5P3LLH6 is usually used as a power switch that can control the direction and speed of the current flow.

The STS5P3LLH6 MOSFET operates with a low voltage when its gate is connected to its drain. The voltage of the gate controls the current flowing between the source and the drain, allowing the user to adjust it with ease. It also has a high input impedance, which reduces the noise that can be created when switching between low resistance and high resistance levels. This is a particularly useful feature for radio frequency and audio circuits, as it helps to reduce the level of background noise created by the switching process.

The MOSFET is also characterized by its low power losses, meaning it can provide reliable operation even when utilized in high-current applications. It has very low on-state-resistance and can switch very quickly, allowing for efficient heat dissipation and reducing the risk of damage to the components. Additionally, the STS5P3LLH6 operates in an off-state-current of up to 25mA, meaning it can be used in many different applications.

An example of a practical application of the STS5P3LLH6 is motor control. The device can be connected to a motor and controlled with a constant voltage. The voltage applied to the gate of the MOSFET will cause a current to flow between the source and the drain, controlling the motor’s speed. Other applications include power switches, signal processing, audio signal processing, and LED dimming.

In summary, the STS5P3LLH6 is a type of single-gate MOSFET that provides high input impedance and off-state-current performance. It has a low on-state-resistance and fast switching speed, allowing for efficient heat dissipation. Its relatively low power losses mean that it can be used in many different applications, such as motor control or power switching. Because the gate voltage controls the current flow between the source and the drain, the STS5P3LLH6 can be used to adjust the speed and direction with ease.

The specific data is subject to PDF, and the above content is for reference

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