Allicdata Part #: | 497-4758-2-ND |
Manufacturer Part#: |
STS5DPF20L |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET 2P-CH 20V 5A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 5A 1.6W Surfac... |
DataSheet: | STS5DPF20L Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.53794 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Base Part Number: | ST*5DPF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 1.6W |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 16V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 2.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STS5DPF20L is a Dual P-channel array, with two N-channel MOSFETs integrated into a single package. It is designed to be used with literally any type of standard low-voltage application and can be used to switch current, perform voltage level shifting and provide protection from various types of overload or overcurrent conditions.
A major advantage of the MOSFET array is its capability to operate as both an N-channel and P-channel device. This allows it to be used for bi-directional applications, such as high speed pulse width modulation. The STS5DPF20L offers a low on-resistance combined with a low power consumption, making it particularly suitable for battery operated applications.
The STS5DPF20L is used in a variety of applications, such as general purpose power switching, audio switching, automotive applications, and smart phones. It is well suited for low-voltage digital logic applications, as well as protection circuits, such as over-current and under-voltage protection. Furthermore, it can be used in sensor and High-Side switch applications.
The main characteristics of the STS5DPF20L are its low on-resistance, fast switching time, and low power consumption. The maximum sustained voltage is 30V, with typical ON-resistance of 15 milliohms. The maximum operating temperature is 125°C. The STS5DPF20L is available in a package which is suitable for standard through-hole mounting.
The working principle of the STS5DPF20L is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology. In its simplest form, a MOSFET is a three-layer transistor, consisting of two junctions and two electrodes. The two junctions (the drain and source) are built up on one layer of metal, while the gate consists of a heavily doped region of semiconductor material in an insulated layer between the drain and source layers. Through the application of a voltage across the gate and the source, current is allowed to flow unrestricted from the drain to the source, hence the name “field-effect transistor”.
The STS5DPF20L combines two MOSFETs (N-channel and P-channel) into a single package, with each MOSFET having its own gate terminal. By applying the appropriate voltage to each gate, the flow of current can be switched on and off between the drain and source terminals, thus controlling the overall current flow of the circuit. By controlling the current flow, the STS5DPF20L can be used to perform low-voltage switching applications, power switching and protection, as well as voltage level shifting and high-side switch applications.
In conclusion, the STS5DPF20L is a dual P-channel array, integrated on a single package, specifically designed for a variety of low-voltage applications. The STS5DPF20L is based on MOSFET technology, allowing it to be used for bi-directional applications and offer low on-resistance, fast switching times and low power consumption. With its wide range of applications and its small size, the STS5DPF20L is becoming increasingly popular for applications such as general purpose power switching, audio switching and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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