STS5DP3LLH6

Series:	DeepGATE™, STripFET™ H6
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Rds On (Max) @ Id, Vgs:	56 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	639pF @ 25V
Power - Max:	2.7W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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STS5DP3LLH6 Application Field and Working Principle

Transistors are one of the most widely used components in electronics. They are one of the basic building blocks for amplifying or switching electronic signals. Field-Effect Transistors (FETs) are a type of transistor that use an electric field to control the electrical current. The STS5DP3LLH6 is a specifically designed field effect transistor that can be found in many electronic applications. This article will discuss the application field and working principle of the STS5DP3LLH6 transistor.The STS5DP3LLH6 is a high-power, three-leaded field effect transistor (FET) designed for use in audio and power applications. Its specification sheet lists a maximum drain current of 4A, a drain-source voltage rating at 20V and an on-resistance of 6 ohms. This makes the device ideal for use in power circuits with higher power requirements, such as audio amplifiers. It can also be used in circuit designs that require higher switching speeds.The STS5DP3LLH6 is a three-terminal device, meaning it has three terminals: a Gate, Drain and Source terminal. The Gate terminal controls the current flow by using an electric field to modulate it. The Drain and Source terminals are used to supply the transistor with power and current. When a voltage is applied to the Gate terminal, the electric field between the Drain and Source terminals is modulated, allowing the current to flow between them.When compared to other FETs, the STS5DP3LLH6 has a higher level of on-resistance and a larger area of application which includes audio and power applications. This makes it an ideal choice for applications that need to drive higher current loads with higher switching speeds. Additionally, the STS5DP3LLH6 is also available in a small footprint, making it easy to incorporate into small circuit designs.In addition to its application field and working principle, the STS5DP3LLH6 also has a number of features that make it an attractive choice for designers and engineers. These features include low power consumption, high power density and high switching speeds. This makes the STS5DP3LLH6 an ideal choice for applications that require power efficiency and high power density. The STS5DP3LLH6 is also designed with high-reliability modes in mind, making it suitable for challenging environments.The STS5DP3LLH6 is a powerful and highly reliable field effect transistor. Its specification sheet lists a maximum drain current of 4A and a drain-source voltage of 20V, making it ideal for use in audio and power applications. Its on-resistance is also 6 ohms and its small footprint makes it an excellent choice for incorporation into small circuit designs. Additionally, the STS5DP3LLH6 also has a number of features, such as low power consumption, high power density and high switching speeds, that make it an attractive choice for designers and engineers. All of these features come together to make the STS5DP3LLH6 and ideal choice for many types of applications.

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