STS7NF60L Discrete Semiconductor Products |
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| Allicdata Part #: | 497-4757-2-ND |
| Manufacturer Part#: |
STS7NF60L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 7.5A 8-SOIC |
| More Detail: | N-Channel 60V 7.5A (Tc) 2.5W (Tc) Surface Mount 8-... |
| DataSheet: |  STS7NF60L Datasheet/PDF |
| Quantity: | 5000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 4.5V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STS7NF60L is a N-channel MOSFET from STMicroelectronics\' STripFET? family. This FET is designed with a highly insulated gate oxide designed to achieve minimal channel resistance and optimized body diode characteristics.
Application Field
STS7NF60L is a N-Channel MOSFET suitable for a wide range of switching, On/Off and linear control applications. It is typically used for load switching, motor control, low-side power switches, DC/DC converters, and solar cell systems. This FET can be also used for battery protection systems where controllable power switching is necessary.
Working Principle
The STS7NF60L is an N-channel MOSFET that operates in the ON/OFF mode. It uses a Vgs of 4.5V for full ON mode, and -4V for OFF mode. When the gate voltage is above the threshold voltage, the FET is ON and conducts current. When the gate voltage is lower than the threshold voltage, the FET is OFF and no current flows. The STS7NF60L has an RDS(ON) of 6.2 mO, which indicates its high efficient of current conduction.
The STS7NF60L FET also has a low drain-source resistance, which provides low voltage drop across the FET while conducting current. This makes the FET an ideal choice for wide range of low-loss switching and low power consumption applications. Moreover, it has a maximum drain current of 5A which makes it a suitable choice for applications where higher load current is required.
Lastly, the STS7NF60L FET features a maximum drain-source voltage ( VDS ) of 600V. This makes it appropriate for use in high voltage, high wattage applications such as DC-DC converters, motor control and solar cell systems.
The specific data is subject to PDF, and the above content is for reference
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