STT2PF60L Allicdata Electronics
Allicdata Part #:

497-8045-2-ND

Manufacturer Part#:

STT2PF60L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 60V 2A SOT23-6
More Detail: P-Channel 60V 2A (Tc) 1.6W (Tc) Surface Mount SOT-...
DataSheet: STT2PF60L datasheetSTT2PF60L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 313pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STT2PF60L is a single N-Channel 60V 20A Power MOSFET developed for high-power switching and load driving applications. This MOSFET has integrated and matched input and output capacitors that enable efficient noise suppression and fast switching. The STT2PF60L offers improved on-resistance and fast switching performance, low gate charge, and low input and output capacitance over other MOSFET types.

The STT2PF60L is an ideal choice for applications where low on-resistance and fast switching are required, such as switching power supplies, solid-state relays, motor controls, and high power audio amplifiers. The technology used to fabricate this MOSFET, known as Vertical Field Effect Transistor (VFET), enables a very low on-resistance, excellent thermal performance, and very fast switching times.

The working principle of the STT2PF60L is similar to that of all other MOSFETs. It consists of two drain terminals, one source terminal and a gate terminal. When no electric field is applied to the gate terminal, the MOSFET acts like an open switch and no current flows through the drain and source terminals. However, when an electric field is applied to the gate terminal, it induces a conductive channel between the drain and source terminals, allowing current to flow.

The electric field needed to induce the conduction channel can be generated in several ways. One such method is by applying a voltage to the gate terminal. This makes the STT2PF60L an ideal choice for applications where voltage control of currents is desired. The STT2PF60L also comes equipped with a polarity protection feature that ensure that the current flows in the intended direction.

The STT2PF60L is designed to operate in high temperatures and can withstand high-current pulses without damage. The device is also resistant to electromagnetic interference and is temperature-compensated for improved Gate-Source symmetry over temperature. The combination of these features makes the STT2PF60L a reliable and robust solution for demanding applications.

In conclusion, the STT2PF60L is a single N-Channel 60V 20A Power MOSFET intended for use in a wide range of applications where high-power switching and load driving are needed. Its low on-resistance, fast switching performance, low gate charge, and integrated input and output capacitors make it an ideal choice for switching power supplies, solid-state relays, motor controls, and high power audio amplifiers. Additionally, its polarity protection feature and temperature compensation ensure reliable and robust operation.

The specific data is subject to PDF, and the above content is for reference

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