
Allicdata Part #: | 497-8045-2-ND |
Manufacturer Part#: |
STT2PF60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 60V 2A SOT23-6 |
More Detail: | P-Channel 60V 2A (Tc) 1.6W (Tc) Surface Mount SOT-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 313pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STT2PF60L is a single N-Channel 60V 20A Power MOSFET developed for high-power switching and load driving applications. This MOSFET has integrated and matched input and output capacitors that enable efficient noise suppression and fast switching. The STT2PF60L offers improved on-resistance and fast switching performance, low gate charge, and low input and output capacitance over other MOSFET types.
The STT2PF60L is an ideal choice for applications where low on-resistance and fast switching are required, such as switching power supplies, solid-state relays, motor controls, and high power audio amplifiers. The technology used to fabricate this MOSFET, known as Vertical Field Effect Transistor (VFET), enables a very low on-resistance, excellent thermal performance, and very fast switching times.
The working principle of the STT2PF60L is similar to that of all other MOSFETs. It consists of two drain terminals, one source terminal and a gate terminal. When no electric field is applied to the gate terminal, the MOSFET acts like an open switch and no current flows through the drain and source terminals. However, when an electric field is applied to the gate terminal, it induces a conductive channel between the drain and source terminals, allowing current to flow.
The electric field needed to induce the conduction channel can be generated in several ways. One such method is by applying a voltage to the gate terminal. This makes the STT2PF60L an ideal choice for applications where voltage control of currents is desired. The STT2PF60L also comes equipped with a polarity protection feature that ensure that the current flows in the intended direction.
The STT2PF60L is designed to operate in high temperatures and can withstand high-current pulses without damage. The device is also resistant to electromagnetic interference and is temperature-compensated for improved Gate-Source symmetry over temperature. The combination of these features makes the STT2PF60L a reliable and robust solution for demanding applications.
In conclusion, the STT2PF60L is a single N-Channel 60V 20A Power MOSFET intended for use in a wide range of applications where high-power switching and load driving are needed. Its low on-resistance, fast switching performance, low gate charge, and integrated input and output capacitors make it an ideal choice for switching power supplies, solid-state relays, motor controls, and high power audio amplifiers. Additionally, its polarity protection feature and temperature compensation ensure reliable and robust operation.
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