STT4PF20V Discrete Semiconductor Products |
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| Allicdata Part #: | 497-3236-2-ND |
| Manufacturer Part#: |
STT4PF20V |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET P-CH 20V 3A SOT-23-6 |
| More Detail: | P-Channel 20V 3A (Tc) 1.6W (Tc) Surface Mount SOT-... |
| DataSheet: | STT4PF20V Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 600mV @ 250µA |
| Package / Case: | SOT-23-6 |
| Supplier Device Package: | SOT-23-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.6W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 15V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 4.5V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 1.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The STT4PF20V is a high voltage n-channel enhancement mode vertical double diffused metal-oxide semiconductor field-effect transistor (MOSFET) with good avalanche performance, manufactured using STMicroelectronics\' proprietary high voltage technology. This product is ideally suited for an array of high voltage switch-mode applications such as dc-dc converters and power supplies, motor control, and general high voltage switching circuits.
The STT4PF20V is part of the STMicroelectronics\' Smart Power MOSFET family and offers improved performance, flexibility and reliability. With an exceptionally good avalanche current capability, it offers an optimized balance between ON-state resistance and gate-source capacitances.
The STT4PF20V uses a N-Channel trench technology employing double diffused drain regions, forming a low-resistance body-source junction. Specifically designed for high voltage switch-mode applications, it offers the following features:
- Low on-resistance
- Good RDS(on) voltage controllability
- High avalanche Ruggedness
- Low thermal impedance
The typical application field and the working principle of the STT4PF20V can be explained by looking at how the device behaves when it is compared to the ideal MOSFET. The STT4PF20V is an enhancement mode MOSFET which means that it needs a voltage on the Gate before current can flow through it (Vsg> Vth). The Vsg is referred to as the threshold voltage and is typically in the range of 2-7V.
In its ideal operation, the STT4PF20V operates like a gate-controlled switch, only allowing current to flow through it when a positive voltage is applied to the gate. As the gate voltage is increased it will decrease the on-state resistance of the device (RDS(on)). This means that it can be used to efficiently regulate the current through a circuit by controlling the gate voltage.
The STT4PF20V can be used in a range of applications that require efficient current regulation or for switching high currents in a robust manner. Due to its high avalanche ruggedness, it is ideal for switch-mode applications such as dc-dc converters and power supplies or motor control circuits. It can also be used in general high voltage switching circuits, making it an ideal solution for a wide range of applications.
The STT4PF20V is an extremely useful product for its intended application fields, providing high levels of performance, flexibility and reliability. Furthermore, its low on-resistance and rugged design make it an ideal solution for a wide range of high voltage switch-mode and general switching applications.
The specific data is subject to PDF, and the above content is for reference
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STT4PF20V Datasheet/PDF