STT6N3LLH6 Allicdata Electronics
Allicdata Part #:

497-13591-2-ND

Manufacturer Part#:

STT6N3LLH6

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 6A SOT23-6
More Detail: N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-...
DataSheet: STT6N3LLH6 datasheetSTT6N3LLH6 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.30125
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 283pF @ 24V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Series: DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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STT6N3LLH6 is a transistor of the field-effect type, which belongs to the single category of FETs or MOSFETs. It is a vertical double-diffused insulated-electrode type transistor, used for amplifying and switching electronic signals. This kind of transistor is used in various applications, from power amplifiers to signal processors, but its main characteristic is its reduced size, due to its vertical configuration.

A FET (field effect transistor) is an active semiconductor device consisting of three terminals and an insulated-gate electrode, used to control the current flowing between the source and drain terminals. The gate is positive with respect to the source, and the source terminal is grounded.

The working principle of STT6N3LLH6 is based on the gate-control mechanism of a MOSFET. The gate terminal is positively charged with respect to the source, which causes the current between source and drain terminals to be controlled by the electric field applied between the gate and source terminals.

The gate terminal should be given a relatively low voltage supply because of its high input impedance. The maximum reverse gate voltage is also limited to keep the transistor in its linear region. As the gate voltage increases, the current increases exponentially –which is known as the transconductance effect– and eventually reaches an saturation point.

The STT6N3LLH6 is commonly used in applications such as switch mode power supplies, voltage converters, clamps, and brushes. It can also be used in circuits for amplifying linear and precision applications because it has good linearity and low harmonic distortion.

This type of transistor has also been successfully used in applications with high speed signals, such as sampling and digital-to-analog converter circuits. Its high input impedance allows to obtain wide bandwidth and low noise.

In general, the STT6N3LLH6 presents several advantages over other transistors. It offers increased power rating and improved switching times, as well as reduced size and weight. Its compact package is also suitable for portable equipment and small-scale applications.

The STT6N3LLH6 is an ideal device for designers looking for a reliable and cost-effective solution for their projects. With its high frequency performance and improved linearity, this transistor can provide superior performance in many types of electronic applications.

The specific data is subject to PDF, and the above content is for reference

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