STU13005N

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Transistors - Bipolar (BJT) - Single

The STU13005N is a NPN Bipolar Junction Transistor (BJT) single device. Transistors are three terminal devices that comprise of two N-type Material layers and a P-type material layer. The device has one Base, one Collector and one Emitter. The STU13005N has been designed with an NPN structure, which is useful for many applications.

Applications

The STU13005N is a useful device for a variety of applications. It is used for high frequency amplification and switching. It is ideal for various small signal radio frequency amplifiers where both high frequency and high input impedance are needed. It is also used for general small signal amplification, oscillators and gate circuits. Furthermore, it is suitable for analog integrated circuits, power amplifiers, switching devices and booster circuits.

Working Principle

The working principle of the STU13005N transistor is based on the electron mobility principle. When a voltage is applied to the base, a current flow between the base and collector region is established which is known as the collector current. A current flow between the base and emitter region is then established as the saturation current (aka the collector-base current). This saturation current increases with increasing collector voltage.

When the base voltage is increased further, the collector current increases exponentially, until it reaches its maximum value. This is known as the Emission principle. The maximum collector current of a NPN BJT is usually much larger than the saturation current. The current gain of a BJT transistor is defined as the ratio of collector current to the saturation current.

The STU13005N transistor has a high current gain which enables it to amplify small signals. The device can be used in high frequency environments and also in analog integrated circuits. It is also a low-power transistor and can be used in high power amplifiers and switching applications.

The STU13005N transistor is a popular choice for many applications because it has excellent performance in the high-frequency domain. Its high current gain makes it suitable for many amplifier and oscillator applications. The device is also relatively inexpensive and is available in a variety of packages.

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