STU10P6F6 Allicdata Electronics
Allicdata Part #:

497-13884-5-ND

Manufacturer Part#:

STU10P6F6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 60V 10A IPAK
More Detail: P-Channel 60V 10A (Tc) 35W (Tc) Through Hole IPAK ...
DataSheet: STU10P6F6 datasheetSTU10P6F6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
Series: DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STU10P6F6 is a part of mosfet and it is a single power transistor. It is designed for use in the field of high voltage and high power applications. The STU10P6F6 is an essential component for many applications and is used in different fields. It is widely used in the power supply, power converter and other power transmission systems.

The STU10P6F6 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is available in TO-220AB, TO-247 and other packages. The devices are suitable for a wide range of voltages, including the high voltage and pulse applications, such as microwave ovens, UPSs, and solar devices.

The transistor can switch up to 10A continuously, with an on-state drain current (ID(ON)) of 5A and a drain-source breakdown voltage (BVds) of 600V. Additionally, it features a low gate-to-source threshold voltage (VGS) of 4V, a high input impedance and fast switching speed.

The working principle of a mosfet is based on the field effect. In this type of transistor, a voltage applied between the gate and the source creates a channel between the drain and the source, thus allowing the flow of electrons from the drain to the source. This process can be used to create either an ON or OFF state of the transistor, in order to control the flow of current.

The STU10P6F6 is a high power device and it is used in many power applications, including switching power supplies, battery chargers, inverters, motor drives, and power factor correction. Additionally, the device is used in different applications that require the switching of high power or high voltage, such as lighting equipment, audio amplifiers and home appliances.

The STU10P6F6 is a rugged and reliable transistor, featuring a wide range of features and benefits. It provides a high input impedance, fast switching speed, low gate-to-source threshold voltage, and high drain-source breakdown voltage. Additionally, the transistor is RoHS compliant and is designed for use in hostile environment, including extreme temperature and humidity.

The STU10P6F6 is an essential component in many power applications, providing excellent performance and reliability. It is one of the most widely used MOSFETs for high voltage and high power applications, such as UPSs, solar applications, and power converters.

The specific data is subject to PDF, and the above content is for reference

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