STU13N60M2 Allicdata Electronics
Allicdata Part #:

497-13885-5-ND

Manufacturer Part#:

STU13N60M2

Price: $ 1.89
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A IPAK
More Detail: N-Channel 600V 11A (Tc) 110W (Tc) Through Hole IPA...
DataSheet: STU13N60M2 datasheetSTU13N60M2 Datasheet/PDF
Quantity: 1000
1 +: $ 1.89000
10 +: $ 1.83330
100 +: $ 1.79550
1000 +: $ 1.75770
10000 +: $ 1.70100
Stock 1000Can Ship Immediately
$ 1.89
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STU13N60M2 power MOSFET is a high performance device for a variety of applications. It is a N-channel MOSFET which is a device used for switching power in high voltage applications. The STU13N60M2 is designed to operate at a high frequency and in high power applications such as power supplies, motor controls and solenoid drivers. It is commonly used in pulsed applications in which current is pulsed on and off. The STU13N60M2 can also be used in audio amplifiers, switching power amplifiers, and other high power applications.

The STU13N60M2 is a high performance MOSFET device. It is designed to address the high-frequency switching and the large power requirements found in high current circuits. The device is constructed from a high-grade, high reliability dielectric material and includes an internally integrated electrostatic protection diode. The device also includes an anti-parallel ESD protection, providing additional protection for sensitive electronics.

The STU13N60M2 is a standard N-Channel MOSFET, with a drain-to-source voltage rating of 600V, a drain-to-gate voltage rating of 600V, and a gate-to-source voltage rating of 10V. It is capable of operating at a maximum drain current of 10A and at a maximum continuous drain current of 13A. It also features a maximum continuous power dissipation of 800W when mounted to a heat sink.

The STU13N60M2 is designed to handle high power applications. Its built-in electrostatic protection diode helps to protect against electrostatic discharges and ESD-induced noise. The device is also shielded against electrical transients, ensuring reliable operation and making it suitable for use in high frequency and high voltage switching applications. Its low on-state resistance, high maximum source-drain diode current and improved switching characteristics make the STU13N60M2 an excellent choice for controlling high currents in medium to low power applications.

The STU13N60M2 MOSFET is designed to operate in both linear and non-linear modes. In linear mode, when the power MOSFET is "on", the voltage across the device is constant and the drain current is proportional to the gate-source voltage. This mode provides superior power ratings and reduced power dissipation. In non-linear mode, the MOSFET switches between "on" and "off" states with the application of a gate voltage. This mode is suited for higher surge currents and improved switching efficiency.

The STU13N60M2 MOSFET can be used in a variety of applications, including power supply designs for computers, motor controls and solenoid drivers. It is also used in audio amplifiers and high power applications, as well as in switching power amplifiers. The device is highly reliable and has a long life span, making it a suitable choice for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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