
Allicdata Part #: | 497-13885-5-ND |
Manufacturer Part#: |
STU13N60M2 |
Price: | $ 1.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 11A IPAK |
More Detail: | N-Channel 600V 11A (Tc) 110W (Tc) Through Hole IPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.89000 |
10 +: | $ 1.83330 |
100 +: | $ 1.79550 |
1000 +: | $ 1.75770 |
10000 +: | $ 1.70100 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STU13N60M2 power MOSFET is a high performance device for a variety of applications. It is a N-channel MOSFET which is a device used for switching power in high voltage applications. The STU13N60M2 is designed to operate at a high frequency and in high power applications such as power supplies, motor controls and solenoid drivers. It is commonly used in pulsed applications in which current is pulsed on and off. The STU13N60M2 can also be used in audio amplifiers, switching power amplifiers, and other high power applications.
The STU13N60M2 is a high performance MOSFET device. It is designed to address the high-frequency switching and the large power requirements found in high current circuits. The device is constructed from a high-grade, high reliability dielectric material and includes an internally integrated electrostatic protection diode. The device also includes an anti-parallel ESD protection, providing additional protection for sensitive electronics.
The STU13N60M2 is a standard N-Channel MOSFET, with a drain-to-source voltage rating of 600V, a drain-to-gate voltage rating of 600V, and a gate-to-source voltage rating of 10V. It is capable of operating at a maximum drain current of 10A and at a maximum continuous drain current of 13A. It also features a maximum continuous power dissipation of 800W when mounted to a heat sink.
The STU13N60M2 is designed to handle high power applications. Its built-in electrostatic protection diode helps to protect against electrostatic discharges and ESD-induced noise. The device is also shielded against electrical transients, ensuring reliable operation and making it suitable for use in high frequency and high voltage switching applications. Its low on-state resistance, high maximum source-drain diode current and improved switching characteristics make the STU13N60M2 an excellent choice for controlling high currents in medium to low power applications.
The STU13N60M2 MOSFET is designed to operate in both linear and non-linear modes. In linear mode, when the power MOSFET is "on", the voltage across the device is constant and the drain current is proportional to the gate-source voltage. This mode provides superior power ratings and reduced power dissipation. In non-linear mode, the MOSFET switches between "on" and "off" states with the application of a gate voltage. This mode is suited for higher surge currents and improved switching efficiency.
The STU13N60M2 MOSFET can be used in a variety of applications, including power supply designs for computers, motor controls and solenoid drivers. It is also used in audio amplifiers and high power applications, as well as in switching power amplifiers. The device is highly reliable and has a long life span, making it a suitable choice for demanding applications.
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