
Allicdata Part #: | 497-12692-5-ND |
Manufacturer Part#: |
STU10NM60N |
Price: | $ 0.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 10A IPAK |
More Detail: | N-Channel 600V 10A (Tc) 70W (Tc) Through Hole I-PA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.97000 |
10 +: | $ 0.94090 |
100 +: | $ 0.92150 |
1000 +: | $ 0.90210 |
10000 +: | $ 0.87300 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STU10NM60N is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a type of Field Effect Transistor (FET). MOSFETs are most commonly used in circuits as switches or amplifiers. The STU10NM60N is a single MOSFET; this means it has just two terminals, the source and drain, and uses a gate terminal to control current flow between the source and drain.
Application Field
MOSFETs, and specifically the STU10NM60N, are used whenever a circuit needs to control, or switch, current flow. For example, the STU10NM60N is used in the power supplies of computers and televisions, where it is used to regulate the current flowing through the circuit. This can help protect the circuit from overcurrent or undercurrent and can also help reduce power consumption. The MOSFET can also be used in a circuit to control the speed of a motor, as it can be switched on and off in order to vary the current flow.
Working Principle
The working principle behind the STU10NM60N is that it is a type of Field Effect Transistor (FET). FETs work by placing an electric field between two terminals (the source and drain), with the electric field controlled by an additional terminal, the gate. Applying a small voltage to the gate will cause an electric field to be created between the source and drain, allowing current to flow. By lowering or raising the voltage, the electric field can be adjusted, letting more or less current pass through the MOSFET as required.
The STU10NM60N is a type of MOSFET transistor. This is because of the addition of an insulating layer between the source and drain. This layer is made of silicon oxide, and the insulating layer acts as a gate to control the field between the source and drain. This means that a relatively small voltage can be applied to the gate to control the amount of current flowing through the circuit, allowing the STU10NM60N to be used in a wide range of applications.
Conclusion
The STU10NM60N is a single MOSFET field effect transistor, often used in applications such as power supplies and motor control. The STU10NM60N works by the electric field between the source and the drain being controlled by an additional gate terminal, allowing more or less current to pass through the circuit as required.
The specific data is subject to PDF, and the above content is for reference
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