STU150N3LLH6

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4040pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 4.5V
Series:	DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs:	3.3 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The STU150N3LLH6 is a Single-channel Enhancement-mode Field-Effect Transistor (FET) with an N-channel MOSFET design. This FET is suitable for a wide range of low-voltage, high-current applications such as DC motor drives, frequency converters, and amplifier circuits. STU150N3LLH6 FETs have a small footprint, making them ideal for consumer electronics and automotive applications that require higher levels of miniaturization. In this paper, we will discuss the application fields and working principle of the STU150N3LLH6 FET.

Application Fields

The STU150N3LLH6 is designed for direct operating voltage of 15V and a maximum drain-source voltage of 30V. The device is capable of switching currents up to 550A in pulsed operation, allowing for a wide range of applications. For example, it can be used in low-voltage motor drives, high-current frequency converters, amplifier circuitry, power supplies and motor control. In consumer electronics, the device is suitable for automotive applications that require higher levels of miniaturization, such as headlight dimmers and wiper systems. The small size makes it ideal for use in portable or embedded devices as it can be easily integrated into small form factor designs. The STU150N3LLH6 is also suitable for high-power audio amplifier circuits. The device can switch currents up to 550A and is capable of operating at frequencies up to 1MHz. This makes it ideal for audio amplifier circuitry, allowing for higher levels of efficiency and improved sound quality.

Working Principle

The STU150N3LLH6 FET works on the principle of capacitive charge transfer. The device consists of a N-type and a P-type region, in which the N-region is usually formed from a heavily doped silicon region and the P-region is usually formed from a lightly doped silicon region. When a voltage is applied between the gate and the source, the N-region becomes more conductive, allowing current to flow from the source to the drain.When the gate voltage is turned off, the N-region becomes less conductive and the FET turns off, which is referred to as the "off state". This off state is typically stable and will not change until a gate signal is reapplied to the transistor. The gate voltage of the STU150N3LLH6 FET is usually kept between 0V and 8V to keep the FET in the "on" state. When the gate voltage is kept below 0V, the device is said to be in the "off" state and will not conduct current until the gate voltage is increased to a positive value. In addition, the STU150N3LLH6 FET is also capable of operating in the "linear" region, in which the device is not fully "on" or "off". In this region, the FET acts as a voltage-controlled resistor, which is used in applications such as audio amplifiers and voltage regulators. When the STU150N3LLH6 FET is operating in the linear region, it is important to ensure that the gate-source voltage remains above the threshold voltage to ensure that the device is fully on. If the gate-source voltage drops below the threshold voltage, the device will not be able to conduct any current and the circuit will not function properly.

Conclusion

The STU150N3LLH6 FET is a high-current, low-voltage FET designed for use in a wide range of applications. The device is suitable for DC motor drives, frequency converters, and amplifier circuitry and is also capable of operating at frequencies up to 1MHz for audio amplifier circuits. The FET works on the principle of capacitive charge transfer and can operate in the "on" and "off" states, as well as the "linear" region. By understanding the application fields and working principle of the STU150N3LLH6 FET, designers can use this device to create circuits that are efficient and reliable.

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