STULED656 Allicdata Electronics
Allicdata Part #:

497-13981-5-ND

Manufacturer Part#:

STULED656

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V IPAK
More Detail: N-Channel 650V 6A (Tc) 70W (Tc) Through Hole I-PAK
DataSheet: STULED656 datasheetSTULED656 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STULED656 is a single field-effect transistor (FET) device designed specifically to aid in low-voltage applications. The STULED656 utilizes a P-channel enhancement-mode FET that provides excellent performance in both analog and digital applications, allowing users to benefit from a robust and reliable design.

The STULED656 provides excellent current control in low-voltage application designs, thanks to its P-channel enhancement-mode FET design. It can be operated over a wide range of voltage (V DS ) with a maximum of 6 V. It is also capable of providing a maximum drain current (I DS ) of up to 6A.

The STULED656 also provides a wide range of operating temperatures, from -55 °C to maximum of 125 °C. The device has a low-power consumption, with a maximum power dissipation of P D 1.4 W. This makes the STULED656 ideal for use in battery-operated applications.

The working principle of the STULED656, as explained in its datasheet, consists of two distinct stages: (1) gate controlling, and (2) channel formation. During the gate controlling stage, a positive voltage is applied to the gate of the FET to turn it ON. The gate voltage is then lowered, allowing a negative bias voltage to be applied to the source and creating the channel formation. Once the channel is formed, the current starts to flow and the device is fully activated.

The STULED656 is designed to provide excellent performance and reliability in low-voltage designs, making it an ideal choice for applications such as battery-operated devices, portable electronics, lighting, and automotive applications.

The device also provides excellent control over current flow, making it an ideal choice for controlling the current flowing through connected components in a discrete-mode outdoor environment. It can also be used in pulse-width modulation (PWM) and switching applications.

The STULED656 is a great choice when it comes to low-voltage applications, and its key features – P-channel enhancement-mode FET design, wide operating temperature range, low power consumption, and wide current range – make it an integral part of any application.

The specific data is subject to PDF, and the above content is for reference

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