STV240N75F3

STV240N75F3 is a device of N-Channel enhancement mode MOSFET produced by STMicroelectronics, a major global semiconductor company headquartered in Geneva, Switzerland. It belongs to a category of transistors called Field Effect Transistors (FETs) and more specifically to the Single type of MOSFETs. This device is characterized by high switching speed, low on-state resistance, ultra low gate charge and low gate-source threshold voltage. The low on-state resistance, RDS(ON), makes it advantageous for operating at high currents and also reduces conduction losses.

Application Field

STV240N75F3 is mainly applicable in audio, communication, discrete, industrial, lighting, power conversion and power management applications. It is suitable for use in applications like AC/DC, DC/DC and DC/AC converters, flyback and buck converters, SMPS, and solar inverter. In other consumer applications, STV240N75F3 is suitable for counter and timer circuits, consumer audio amplifiers, power tools, and so on. Also, it can be used for motor control in heavy duty electrical equipment including electric cars, elevators, lifts, and other transport vehicles, as well as industrial robotics.

Working Principle

A FET operates by controlling the amount of current that is allowed to pass through it from source to the drain terminal, just like other types of transistors. STV240N75F3 is an N-Channel, Enhancement Mode type MOSFET. When the Gate terminal voltage is zero or there is no voltage applied to the gate, the device is off and no current will flow through. To turn the device on, a gate voltage (positive voltage applied to the gate terminal with respect to the source) is applied. When gate-source voltage, VGS, is larger than the gate-source threshold voltage, VGS(th), the current will be allowed to flow from the source to the drain.The gate threshold voltage of the STV240N75F3 device is 4 V and its RDS(ON) is 10 mOhm ±6%. This device also features low gate charge and high switching speed. The low gate charge results in low input capacitance, which makes it suitable for high switching frequencies. It has a high breakdown voltage of 240 V and it can withstand a diode-clamped inductive Generator load (in a Stalker Generator Application) of +/- 600V.

Conclusion

STV240N75F3 is an N-Channel enhancement mode MOSFET produced by STMicroelectronics. It has low on-state resistance, RDS(ON), high switching speed, low gate charge and low gate-source threshold voltage making it ideal for various applications like audio, power management, solar inverter, etc. The device also features a breakdown voltage of 240 V and can withstand a diode-clamped inductive Generator load of +/- 600V.

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