STY50N105DK5 Allicdata Electronics
Allicdata Part #:

497-17225-ND

Manufacturer Part#:

STY50N105DK5

Price: $ 18.33
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 1050V 44A MAX247
More Detail: N-Channel 1050V 44A (Tc) 625W (Tc) Through Hole MA...
DataSheet: STY50N105DK5 datasheetSTY50N105DK5 Datasheet/PDF
Quantity: 3
1 +: $ 16.66350
30 +: $ 14.16410
120 +: $ 13.16420
Stock 3Can Ship Immediately
$ 18.33
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: MAX247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drain to Source Voltage (Vdss): 1050V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STY50N105DK5 is one of the most commonly used power MOSFET transistors. It has been specifically designed to be used in a wide range of power applications such as power amplifiers, audio systems, and power switching circuits. It is a commonly used device in the field of power electronics due to its ease of use and low cost.

STY50N105DK5 is usually used for power applications which require a high operating temperature up to 175°C. It is also suitable for high frequency switching or H-Bridge applications. Moreover, it has a low on-state resistance and is able to handle high surge currents.

The STY50N105DK5 is a single N-Channel Power MOSFET, which has an exceptionally intelligent design. The transistor is direct mounted on the plastic package for better thermal conduction. It also has built in anti-EMI protection and is resistant to static discharge.

The applications and use of an STY50N105DK5 are mainly focused on high power switching, such as in audio amplifiers, DC-DC converters, relay coils, and the like. In order to maximize its performance, the STY50N105DK5 is usually used in combination with other high power transistors. It is designed to have low switching losses, a low on-state voltage drop, fast switching times and high current handling capability.

Moreover, the STY50N105DK5 works with a very simple working principle. In most applications, the device acts as a pass element, allowing current to flow through its drain and source when it is activated by an appropriate gate voltage. This gate voltage is generated by some type of control circuit, like an amplifier, a microcontroller, or an SCR controller. The current flows through the drain and source, and it is dependent on the applied gate voltage.

Aside from these, the STY50N105DK5 has been equipped with additional features that further enhance its performance. It has built-in avalanche protection, which helps protect against thermal stresses, enabling the device to be used in high power switching applications. Additionally, it has built-in thermal protection, which switches off the device when its temperature runs above a certain set limit.

In conclusion, the STY50N105DK5 is a single N-Channel Power MOSFET which can be used for a wide range of power applications. Its robust design, high operating temperature range, low on-state resistance, and high surge current capability make it an ideal choice for high power switching applications. Its simple working principle, built-in avalanche protection, and thermal protection also make it a reliable device.

The specific data is subject to PDF, and the above content is for reference

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