
Allicdata Part #: | 497-2775-5-ND |
Manufacturer Part#: |
STY60NM50 |
Price: | $ 15.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 60A MAX247 |
More Detail: | N-Channel 500V 60A (Tc) 560W (Tc) Through Hole MAX... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 15.24000 |
10 +: | $ 14.78280 |
100 +: | $ 14.47800 |
1000 +: | $ 14.17320 |
10000 +: | $ 13.71600 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | MAX247™ |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 560W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 266nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The Common Source FET (STY60NM50) is a high performance N-Channel Enhacement MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in a wide variety of applications. This type of MOSFET has its source connected to ground and its drain connected to the high voltage supply. FETs can be used in a wide range of electronic circuits, including amplifier circuits, power supplies, and even digital logic circuits. Depending on its operating mode, FETs can be used as a voltage regulating device, as a switch, or as a voltage translating device.
The STY60NM50 MOSFET is designed for high current, low resistance, and fast switching applications. It has an extremely low on-state resistance (RDS(on)) and is capable of carrying currents up to 150A. It also has a low gate-source threshold voltage (VGS(th)) of 4.5V, which means it can be used in low voltage applications. This makes it a great choice for low-voltage switching and low power/high speed applications.
The MOSFET works by allowing current to flow through its semiconductor channels, which begins to occur when a voltage is applied to the gate of the FET. When the applied voltage is greater than the threshold voltage, the semiconductor channels are opened, creating an electrical current from the source to the drain. This current is then modulated by adjusting the applied voltage. When the voltage is decreased below the threshold voltage, the channels begin to close, reducing the current flow from the source to the drain.
The STY60NM50 is ideal for use in circuit design where high current and low signal/noise ratios are of concern. It can be used for switching signal lines, controlling power transistors, or as an active switch in signal conditioning and transimpedance amplifier (TIA) applications. In addition, its low on-state resistance makes it perfect for high frequency pulse applications.
The STY60NM50 is most commonly used in power applications such as switching power supplies, DC-to-DC converters, and motor control circuits. It can also be used in low-voltage applications such as RF amplifiers, audio amplifiers, and low-noise oscillators. In addition, thist MOSFET can be used in high-current applications such as switching of high-power LEDs and power transistors.
The STY60NM50 is an extremely versatile MOSFET that can be used in a variety of applications. Its low on-state resistance and high current capabilities make it ideal for low-voltage and high-current applications. It is a cost-effective solution for many power, signal, and logic applications.
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