STY80NM60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STY80NM60N is a high-voltage, low-RDS(on) N-Channel MOSFET made with ST’s revolutionary new FFETs technology. The device uses the industry-standard package, which makes this a much easier and cost-effective solution for certain applications. It is designed for applications such as switching and rectification for automotive systems, motors, industrial equipment, and household appliances.

When it comes to semiconductor devices, FETs, or Field Effect Transistors are among the most widely used. It is widely used in the production of integrated circuits. A FET is a three-terminal semiconductor device that can be used to amplify and switch electronic signals. Among the FETs, MOSFETs are widely used due to their excellent electrical characteristics. The STY80NM60N is an example of a MOSFET that offers very low RDS(on) values along with excellent power handling capabilities.

The STY80NM60N is a N-Channel MOSFET with a voltage rating of 800V and an RDS(on) max of 0.35 Ohms. It has a maximum drain current of 60A and a maximum gate charge of 228nC at 10V. The device has an avalanche energy rating of 420mJ and a maximum junction temperature of 175°C. Its package is an industry-standard TO-247, making this an easier and cost-effective solution.

The STY80NM60N has a number of application fields where it can be used. It can be used in switching mode power supplies, in motor control and automation systems, in lighting applications, and in rectification for automotive systems. It is especially useful in high-power applications such as motor control, industrial equipment, and household appliances. The device is capable of withstanding large amounts of current and voltages, making it ideal for these applications.

The STY80NM60N works by using a gate voltage to control the flow of current between the source and drain terminals. The gate voltage is provided by an external control circuit and when a sufficient voltage is applied, the MOSFET turns on and conducts current between the source and drain terminals. When the gate voltage is removed, the MOSFET turns off and current stops flowing. This is the basic working principle of the STY80NM60N.

In summary, the STY80NM60N is a high-voltage, low-RDS(on) N-Channel MOSFET that is used in a variety of applications. It has a voltage rating of 800V, a maximum drain current of 60A, and an avalanche energy rating of 420mJ. This device is ideal for applications such as motor control, industrial equipment, and household appliances where high power handling is required. The STY80NM60N works by using a gate voltage to control the current flow between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference