| Allicdata Part #: | SUA70060E-E3-ND |
| Manufacturer Part#: |
SUA70060E-E3 |
| Price: | $ 1.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 56.6A TO220 |
| More Detail: | N-Channel 100V 56.6A (Tc) 39W (Tc) Through Hole TO... |
| DataSheet: |  SUA70060E-E3 Datasheet/PDF |
| Quantity: | 675 |
| 1 +: | $ 1.22220 |
| 10 +: | $ 1.08234 |
| 100 +: | $ 0.85554 |
| 500 +: | $ 0.66350 |
| 1000 +: | $ 0.52381 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220 Full Pack |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 39W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
| Series: | ThunderFET® |
| Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 56.6A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.The SUA70060E-E3 is an N-channel Enhancement Mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) used for a wide range of applications. This semiconductor device is ideal for use in power management and switching applications, offering excellent performance and reliability at an affordable cost. It can be used for switching devices such as power supplies, motor controls, and audio amplifiers, as well as other low-power applications. It is also suitable for use as a load switch, allowing current to flow through the device when activated.
The SUA70060E-E3 is composed of two parts: an N-type MOSFET and a P-type MOSFET. The N-type MOSFET is a source follower, while the P-type MOSFET is a drain follower. This device uses a high voltage to turn the two MOSFETs on, allowing current to flow through the circuit.
When the voltage is applied to the gate of the device, a controlled electric field is generated between the source and the drain. This electric field causes electrons to move from the source to the drain, resulting in a flow of current through the device. The ease of current through the device is then determined by the magnitude of the applied voltage. Adjusting the voltage applied to the gate of the SUA70060E-E3 can allow for precise control of the device\'s current output and switching capabilities.
The SUA70060E-E3 is also highly reliable and durable, making it a great choice for use in a variety of applications. It is built with aluminium oxide laminate layers, offering excellent protection from chemical and thermal shock that can occur in some applications. It is also designed to promote low noise and high power efficiency.
The SUA70060E-E3 is a great choice for use in consumer electronics, industrial, automotive, and home appliance applications, as it offers excellent performance and reliability. This MOSFET is able to withstand high operating temperatures, making it suitable for use in high-power applications. Additionally, its power ratings and low on-resistance ensure reliable operation in a variety of conditions.
The SUA70060E-E3 is a great choice for use in a variety of applications, offering excellent performance and reliability at an affordable cost. Its two-part construction and high endurance design make it suitable for use in a variety of conditions, while its low on-resistance and high power ratings ensure reliable operation. Additionally, its aluminium oxide laminate layers offer protection from chemical and thermal shock, making it ideal for a variety of applications. With its great performance and reliability, the SUA70060E-E3 is a great choice for use in consumer electronics as well as industrial, automotive, and home appliance applications.
The specific data is subject to PDF, and the above content is for reference
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