SUB75P03-07-E3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUB75P03-07-E3TR-ND |
| Manufacturer Part#: |
SUB75P03-07-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 30V 75A D2PAK |
| More Detail: | P-Channel 30V 75A (Tc) 3.75W (Ta), 187W (Tc) Surfa... |
| DataSheet: |  SUB75P03-07-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D2Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 187W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Introduction
The SUB75P03-07-E3 is a single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed and manufactured by ON Semiconductor, a semiconductor manufacturer headquartered in Phoenix, Arizona. It is part of the SUBMOS series of MOSFETs, which are designed to be easy to use, thanks to the reduced gate charge and switched resistance, while still providing the same high-performance features of the traditional MOSFETs. The SUB75P03-07-E3 is particularly well suited for applications in a variety of areas, such as motor control and power supply circuits.
Application Field
Due to its low On-state resistance and fast switching speed, the SUB75P03-07-E3 is an excellent choice for applications such as motor control, frequency-driven motor control, DC-DC conversion, voltage regulation, and switching power supply circuits. It is particularly ideal for AC-DC power supplies, where its low RDSON resistance allows it to switch quickly and efficiently. Additionally, its low input capacitance allows for fast switching, while its rugged construction makes it suitable for harsh environments.
It is also an excellent choice for power MOSFET circuits, as it offers superior performance compared to traditional MOSFETs, thanks to its low gate charge, improved ESD protection and low self-capacitance. Its low gate charge and fast switching speed also make it well suited for switching circuits, as it is able to switch faster than traditional MOSFETs. Its high voltage compliance makes it suitable for use in high voltage applications, such as DC-AC inverters and motor drives, where it can be used to provide efficient power conversion.
Working Principle
The working principle of the SUB75P03-07-E3 MOSFET is based on the physical principle that when the gate voltage is increased, the channel is opened and the current is conducted from source to the drain. The current flow depends on the channel width and length and can be controlled by varying the gate voltage. This MOSFET has a drain-to-source resistance, known as the RDSON, which is used to measure its power loss. The lower the value of RDSON, the less power is wasted and the more efficient the device is.
The SUB75P03-07-E3 also features an arrangement of Schottky diodes around the drain and source in order to provide electrostatic discharge (ESD) protection and reduce the potential for false triggering. Additionally, this MOSFET features a reduced gate charge, which is beneficial for improving switching times. This makes it suitable for switching circuits and high-frequency applications, as it is able to switch faster than traditional MOSFETs.
Conclusion
The SUB75P03-07-E3 is an excellent option for a variety of motor control and power supply applications, due to its low On-state resistance, fast switching speed, low input capacitance and rugged construction. Additionally, its low gate charge and fast switching speed make it uniquely suited for switching and high-frequency applications, while its Schottky diodes provide ESD protection. For these reasons, the SUB75P03-07-E3 is an excellent choice for both industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| SUB75P03-07-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 75A D2PAK... |
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