| Allicdata Part #: | SUD80460E-GE3-ND |
| Manufacturer Part#: |
SUD80460E-GE3 |
| Price: | $ 0.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 150V 42A TO252AA |
| More Detail: | N-Channel 150V 42A (Tc) 65.2W (Tc) Surface Mount T... |
| DataSheet: |  SUD80460E-GE3 Datasheet/PDF |
| Quantity: | 856 |
| 1 +: | $ 0.71820 |
| 10 +: | $ 0.62622 |
| 100 +: | $ 0.48315 |
| 500 +: | $ 0.35790 |
| 1000 +: | $ 0.28632 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252AA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 65.2W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | ThunderFET® |
| Rds On (Max) @ Id, Vgs: | 44.7 mOhm @ 8.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SUD80460E-GE3 is an enhancement-mode Gallium Nitride (GaN) Power Field-Effect Transistor specifically designed for high frequency switching applications such as AC-DC and DC-DC converters. The device offers minimal switching losses and high efficiency over a wide operating temperature range.
The SUD80460E-GE3 is a Power Field Effect Transistor (PFET) designed for use in a variety of applications. It is a single-stage, high frequency switching device that is used to control the flow of electrical current in a power system. The PFET is a non-linear device with a very high input impedance and a very low output impedance, making it ideal for high frequency switching applications.
The SUD80460E-GE3 is a high-efficiency field-effect device operating in the "enhancement" mode. Its operation is based on a depletion region of actively-controlled charge associated with the two p-type and n-type regions at the channel of the FET. When a voltage is applied to the gate, a channel forms between the n-type and p-type regions that allows charge to flow from source to drain. By varying the gate voltage, the size of the channel can be controlled, thus changing the current that flows from the source to the drain.
The main advantage of using the SUD80460E-GE3 is its low on-state resistance and very high efficiency. This efficiency means that the device can operate at high frequencies without large power losses and can achieve high frequency switching applications at small dimensions. This enables the device to be used in a variety of applications such as power conversion and efficient power supplies.
The SUD80460E-GE3 also has an internal temperature protection feature, which helps to protect the device in case of over-temperature conditions. This makes the device more reliable and safe for use in power systems.
In conclusion, the SUD80460E-GE3 is a high-efficiency, high-frequency switching device designed for use in a variety of applications. Its low on-state resistance and high efficiency make it perfect for use in power conversion and efficient power supplies. The device also has an internal temperature protection feature which makes it more reliable and safer for use in power systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SUD80460E-GE3 | Vishay Silic... | 0.79 $ | 856 | MOSFET N-CH 150V 42A TO25... |
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