SUG80050E-GE3

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The SUG80050E-GE3 is a single enhancement-mode vertical DMOS transistor with a single-sided gate. It is designed for applications such as DC/DC converter synchronous rectification, battery chargers, and converters, as well as applications in automotive and low-power logic applications. SUG80050E-GE3 offers wide range of features including fast switching speed, low on-resistance, common-source and common-drain configurations, and a wide breakdown voltage range.

The SUG80050E-GE3 belongs to the family of Field Effect Transistors (FETs), which has a specific architecture, working principle and C-V characteristics that are totally different from that of a Bipolar Junction Transistor (BJT). Unlike the BJT, which uses holes and electrons as charge carriers, the FET uses majority charge carriers (electrons), varying their amount to control the flow of current through the circuit. A fixed supply voltage applied across the transistor is used to change the number of charge carriers and hence the current flow.

The working principle of the SUG80050E-GE3 involves the application of a gate voltage (Vgs) to the gate, which controls the width of the conducting channel and the drain current flowing from the source to the drain. When the gate voltage is below the threshold voltage Vth, the device is in the cut-off region, where the channel is blocked and no current flows. When the gate voltage exceeds the threshold voltage, the device is in the active region, and a channel is created, which allows current to flow. The gate voltage also affects the channel width and hence the drain current. The channel width determines the resistance between the source and the drain and therefore affects the current flowing through the transistor.

In addition to its fast switching speed and low on-resistance, the SUG80050E-GE3 features common-source and common-drain configurations, which provide the design engineer with greater flexibility when selecting the transistor configuration, depending on the application. The wide breakdown voltage range and high current handling capability of the SUG80050E-GE3 also makes it well suited for high voltage, high power applications.

In conclusion, the SUG80050E-GE3 is an advanced vertical DMOS transistor, which combines high performance characteristics, fast switching speed, common-source and common-drain configurations, and wide breakdown voltage ranges, in a single package. This makes the SUG80050E-GE3 a robust and reliable solution for a wide range of DC/DC converter synchronous rectification, battery charger and converter applications, as well as automotive and low-power logic applications.

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