SUG90090E-GE3 Discrete Semiconductor Products

The SUG90090E-GE3 is a Dual Drain Enhancement Type MOSFET, specifically an N-Channel enhancement MOSFET, developed and manufactured by TOSHIBA Semiconductor and Storage. This model of MOSFET is internationally recognized for its reliability, superior performance, and efficiency.

MOSFETs are essential in a variety of industrial, commercial, and consumer applications due to their ability to rapidly switch on and off and allow for control of a wide range of voltages and currents. The SUG90090E-GE3 is a dual drain enhancement type MOSFET, meaning it utilizes two drain sides, one positive and one negative, with the same potential, allowing it to operate in a slightly different manner than single Unipolar MOSFET devices, such as the popular IG90060E-GE3.

The SUG90090E-GE3 utilizes a Schottky Diode as its body diode, and a VQFN-4 package, with a 4ømm×4ømm body size. This model of MOSFET is designed for optimal performance and to be used in multiple applications, such as switch mode power supplies, computer power supplies, high power converters, and general purpose inverters. Its off-state and steady-state drain-source voltage, Vds, range from -20V to -25V, while the gate-source voltage, Vgs, ranges from -5V to -13V, allowing the SUG90090E-GE3 to accommodate a wide variety of voltage and current requirements.

The SUG90090E-GE3 works on the principle of minority carriers that flow through the drain-source channel. When the gate-source voltage applied to the device exceeds a certain threshold, the channel forms and sets up an electric field that conducts current between the drain and the source. The device is then said to be “on”. Consequently, when the gate-source voltage is reduced, the electrical field weakens, current stops avoiding between the drain and the source, and the device is “off”.

The SUG90090E-GE3 can switch from its “on” state to its “off” state very quickly, a feature that makes it highly useful in fast switching applications. The device can switch from “off” to “on” in less than 1 nanosecond and vice versa. This ensures that the device does not produce excessive heat due to current conduction and also ensures faster switching time than would otherwise be possible.

In addition to its excellent switching time, the SUG90090E-GE3 is also praised for its low on-resistance. This gives it advantages over other MOSFETs in terms of power dissipation, power dissipation per square mm, and circuit operation by improving the total efficiency of the circuit. Its low gate-source capacitance also makes it an ideal choice for high-speed switching applications.

The SUG90090E-GE3 provides a number of advantages over other similar MOSFETs available in the market, making it a go-to choice for a variety of application fields. Its ability to switch quickly, along with its low on-resistance and gate-source capacitance, make it the perfect solution for a number of uses such as power converters, power supplies, inverters, and fast switching applications. Additionally, the fact that it utilizes a Schottky diode as its body diode makes it more resilient to damage due to excessive current, thus providing an extra layer of protection against short-circuit failures.

The SUG90090E-GE3 is a highly reliable and powerful MOSFET that can be used in a variety of applications due to its excellent performance and switching time. Its low on-resistance, gate-source capacitance, and body diode provide an extra layer of protection and resilience, making the SUG90090E-GE3 an ideal choice for a variety of switched and fast switching applications.