SUM09N20-270-E3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUM09N20-270-E3TR-ND |
| Manufacturer Part#: |
SUM09N20-270-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 9A D2PAK |
| More Detail: | N-Channel 200V 9A (Tc) 3.75W (Ta), 60W (Tc) Surfac... |
| DataSheet: |  SUM09N20-270-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D2Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 60W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 270 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SUM09N20-270-E3 is a silicon N-channel enhancement mode power field-effect transistor (FET) designed for use in high-current power management applications. It is specifically designed for applications requiring low drain-source on-resistance, low operation and switching frequency, and low gate charge. This transistor is especially suitable for use in power switching applications and in circuits requiring low-drain-source-voltage and low on-resistance.
The SUM09N20-270-E3 is built around a single N-channel FET, which utilizes a self-aligned gate process to reduce gate length and increase gate resistance. The device has a general purpose drain-source voltage of up to 75V, a gate-source voltage of up to 300V, and a continuous drain-source current of up to 210A peak. The SUM09N20-270-E3 has a low gate charge, which helps to improve performance, reduce EMI, and provides improved reliability.
The SUM09N20-270-E3 has a fast switching speed, which allows for the use of high-frequency switching waves, making it suitable for applications such as regulators, inverters, DC-DC converters, FPGAs, and power management. It also has a built-in protection feature to protect the device from over-voltage. The SUM09N20-270-E3 is RoHS compliant and is available in a surface mount package.
The SUM09N20-270-E3 works by providing a path of conduction between the source and drain when a voltage is applied between the gate and the source. The FET acts as a switch when a voltage is applied, allowing a current to flow from the source to the drain and establishing a path of conduction between the two nodes. The drain-source resistance is proportional to the gate voltage. This voltage is controlled by the applied gate voltage and is typically lower than that applied to the drain. As the gate voltage is increased, the threshold voltage at which the device begins to conduct is also increased, allowing for finer control of the current flow.
The SUM09N20-270-E3 is commonly used in applications such as DC-DC converters, voltage regulators, switch mode power supplies, and other control circuits. Its low on-resistance and low gate charge makes it suitable for high-current and high-frequency switching applications. Its robust design also ensures that it is protected from over-voltage and ESD damage, making it a reliable and reliable choice for applications requiring high performance power switching.
The specific data is subject to PDF, and the above content is for reference
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