SUM33N20-60P-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM33N20-60P-E3TR-ND |
Manufacturer Part#: |
SUM33N20-60P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 33A D2PAK |
More Detail: | N-Channel 200V 33A (Tc) 3.12W (Ta), 156W (Tc) Surf... |
DataSheet: | SUM33N20-60P-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.12W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2735pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 113nC @ 15V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 59 mOhm @ 20A, 15V |
Drive Voltage (Max Rds On, Min Rds On): | 10V, 15V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUM33N20-60P-E3 is a voltage-controlled field effect transistor (FET), which is also known as a MOSFET (metal-oxide-semiconductor FET). It belongs to the single type, which means that it has a single chip configuration and a single gate. This kind of transistor has many areas of application, such as solid-state switching, power supply, high-speed switching and frequency regulation.
The general working principle of all FETs is that their voltage variation is proportional to the current transferred to them. This means that when the input voltage increases, the output current also increases, and vice versa. In the case of the SUM33N20-60P-E3, this voltage-controlled current operates at 20-60V and 3A maximum. This is important for applications such as power supplies, and makes it one of the more powerful transistors in this category.
The model SUM33N20-60P-E3 is highly versatile, and has many applications in electronics, computers and communication systems. These include: switching power supply converters, high frequency circuits and high speed switching circuits. This kind of transistor is ideal for voltage regulation and low-noise designs, as it can control and regulate the voltage very accurately.
The SUM33N20-60P-E3 is also known as a High Electron Mobility Transistor (HEMT), as it exhibits high electron mobility at high electric fields. This means that it can be used in environments with intense electric fields. This makes it well-suited for high power applications, such as switching and high frequency circuits.
In addition to power supply converters, the SUM33N20-60P-E3 can also be used in voltage contolling and boosting designs, such as for personal digital assistants (PDAs) and laptop computers. In these devices, the transistor can be used to boost the output voltage to match the device\'s power requirements.
As mentioned earlier, the SUM33N20-60P-E3 is a single chip configuration, and has a single gate. This makes it ideal for high-density designs, and also enables it to support high bandwidths, as it only requires one line to control the voltage. It is also a very cost-effective solution, as it eliminates the need for multiple components.
Overall, the SUM33N20-60P-E3 is a powerful and versatile field effect transistor with many applications in solid-state switching, power supply converters, high frequency circuits and high speed switching circuits. It has a single chip configuration and single gate, which makes it ideal for high-density designs and high bandwidths, as well as cost-effectiveness. It can also be used in high electric field applications, as it exhibits high electron mobility.
The specific data is subject to PDF, and the above content is for reference
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