SUP18N15-95-E3

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The SUP18N15-95-E3 is a high-voltage N-channel MOSFET that has a high voltage drain-to-source breakdown of 1800V and superior performance when it comes to power handling. It is a Single-Type MOSFET and is part of a large family of devices in this category. This document will discuss the application field and working principle of this device as well as some of its key features and characteristics.

Application Field

The SUP18N15-95-E3 is designed for a variety of applications and can be used across a wide range of industrial, automotive, and consumer electronics. Examples of some of its uses include AC / DC motor drive applications, DC-AC power conversion, high power switching applications, power supply circuits, and automotive applications such as lighting and control systems. Furthermore, the device can be used in audio power amplifiers, battery management systems, high-current regulator systems, relay drivers, and motor drives.

Working Principle

The SUP18N15-95-E3 is a N-channel enhancement mode MOSFET which can be utilised in switching applications. It operates by the principle of high voltage drain-to-source breakdown and high current drain-to-source flowing control. When its gate voltage is below the threshold voltage, the device is in the off-state. Once its gate voltage is increased beyond the threshold voltage, it is said to be in the on-state and conducts current from the drain to the source.

It is an enhancement type device, meaning it does not require a certain amount of gate current to turn on like a depletion type MOSFET does. The gate voltage determines the drain current, which is controlled by the gate voltage. The gate capacitance of the device is also important since it helps to preserve the voltage across the device in both its on and off states.

Features & Characteristics

The SUP18N15-95-E3 is capable of operating at a temperature range of -55°C to +175°C, making it suitable for a variety of applications. It is also capable of handling large drain-source currents of up to 600A with a drain-source voltage of 1800V. Furthermore, the P D (Power Dissipation) Max of this device is 12W, making it suitable for high power applications. Additionally, the device has a high ESD capability of 2000V HBM, meaning it can withstand Electrostatic Discharge in harsh environments. It also has an R DS(ON) of 5mΩ @ 10V, allowing it to source large current with low voltage drops.

To summarise, the SUP18N15-95-E3 is a high-voltage N-channel enhancement mode MOSFET which is suitable for a variety of applications. It can operate across a wide temperature range and handle large current flows. It is also very ESD-resistant and has a high level of power handling capability. All these features combined make the device suitable for a multitude of applications, from automotive to power switching.

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