| Allicdata Part #: | SUV85N10-10-E3-ND |
| Manufacturer Part#: |
SUV85N10-10-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 85A TO220AB |
| More Detail: | N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Thro... |
| DataSheet: |  SUV85N10-10-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6550pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SUV85N10-10-E3 is a high voltage pulse MOSFET integrated circuits (ICs) produced by Intersil Corporation. This MOSFET is primarily designed for applications such as voltage regulation, uninterruptible power supplies, power management and motor control. It is also useful in applications where high voltage and high current are required.
The SUV85N10-10-E3 consists of two n-channel MOSFETs connected in a back-to-back configuration, also known as a "cascode" configuration. This configuration provides higher switching speed and lower on-resistance than a single MOSFET, when used in high power applications. The device has an integrated high-voltage pulse-width modulation (PWM) control circuit. This control circuit allows the device to be switched at a predetermined switching frequency, while providing a low source resistance.
The device features a high dielectric strength (10 kV) and a high surge current rating (150 A). This enables the device to handle high voltage and high current applications. The device is also equipped with a soft start feature, which prevents high inrush currents when the device is activated.
The SUV85N10-10-E3 operates by applying a voltage to the gate of the MOSFET. The gate voltage is then amplified by the integrated PWM control circuit, which is then used to control the MOSFET. This results in either the device being switched on or off. When the device is switched off, the PWM control circuit reduces the gate voltage to ensure safe dissipation of the stored energy.
The device features an efficient power dissipation structure, which prevents energy accumulation in the circuit and minimizes energy losses. This in turn increases the efficiency of the device and the power system. The device also features EMI reduction circuitry, which prevents electromagnetic interference from affecting the performance of the device.
Overall, the SUV85N10-10-E3 is an ideal MOSFET for applications requiring high voltage, high current, efficient power dissipation and EMI reduction. The device is easy to integrate into systems due to its integrated PWM control circuit and its high surge current rating. The device is also capable of operating at high switching frequencies.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SUV85N10-10-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 85A TO22... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...