| Allicdata Part #: | SVD14N03RT4G-ND |
| Manufacturer Part#: |
SVD14N03RT4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 14A DPAK |
| More Detail: | N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Sur... |
| DataSheet: |  SVD14N03RT4G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.04W (Ta), 20.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 115pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 95 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
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The SVD14N03RT4G is a special dual N-channel enhancement-mode depletion-type vertical field-effect transistors (FETs). This device is composed of two individually isolated N-channel power FETs with the same package, the same source, drain, and gate size. The SVD14N03RT4G uses a three-terminal arrangement of source, gate, and drain with a single terminal of control. The gate is connected to the source and the drain is connected to the substrate. The device is designed for use in low-voltage and high-current applications. This device is fabricated using a proprietary high voltage, high-current submicron process.
The SVD14N03RT4G works on the principle of controlling the flow of electric current by using an electric field. It operates based on the principle that if a potential difference is applied across a conductor, a flow of electrons will be generated. The application of a potential difference between the gate and the source creates an electric field which in turn modulates the conductivity of the N-channel device by depleting the energy of the electrons. This process of controlling the amount of current passing through the device by applying a potential difference is known as enhancement-mode operation.
One of the main advantages of using the SVD14N03RT4G is that it can handle high currents that are up to 4A. Its low on-resistance lowers the power dissipation and helps to increase system efficiency. The device also has the capability of operating in surface mount and through-hole modes, making it very versatile. This makes it a great choice for many applications that require high-current yet low-voltage power transistors.
The SVD14N03RT4G is usually used for power applications in automotive, computer, communication, industrial, and consumer electronics. It is suitable for use in DC-DC converters, portable device power management, motor control circuits, Class-D amplifier circuits, power booster, and low-side switching systems. In addition, it can also be used in various high-power applications such as LED drivers and audio amplifiers.
In summary, the SVD14N03RT4G is a unique dual N-channel enhancement-mode depletion-type vertical field-effect transistor that features high-current and low-voltage operation for power applications in automotive, computer, communication, industrial, and consumer electronics industries. It operates based on the principle of controlling the flow of electric current by using an electric field and it provides a low on-resistance which helps to reduce power dissipation and increase system efficiency. The device also offers the versatility of being used in both surface mount and through-hole modes, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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