SVD2955T4G Discrete Semiconductor Products |
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Allicdata Part #: | SVD2955T4GOSTR-ND |
Manufacturer Part#: |
SVD2955T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 12A DPAK |
More Detail: | P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK |
DataSheet: | SVD2955T4G Datasheet/PDF |
Quantity: | 20000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SVD2955T4G application field and working principle
The SVD2955T4G is a type of transistor known as a field effect transistor (FET). FETs are a type of transistor that uses an electric field to control and modulate the current flow. This type of transistor is often used in electronic circuits for applications such as switching and amplification.
FETs are classified into two basic categories: single-gate and dual-gate. Single-gate FETs, such as the SVD2955T4G, are the most basic type of FETs, where the gate is connected to a single terminal. The SVD2955T4G is a type of single-gate MOSFET, which stands for “metal-oxide-semiconductor field-effect transistor.” Like all FETs, MOSFETs are controlled by a signal applied to the gate terminal.
The SVD2955T4G is a two-terminal N-Channel MOSFET with a maximum current rating of 400 mA and a maximum voltage rating of 30V. It is also a low-power MOSFET with a maximum power rating of 0.5 W. The SVD2955T4G features a breakdown voltage of 5 V and is capable of operating over a wide temperature range from -55C to 175C.
The SVD2955T4G is commonly used in applications such as power switching, voltage regulation, motor control, and high-frequency switching. It is also often used in electronic circuits for purposes such as relays, RF amplifiers, and high-speed switching circuits.
The working principle of the SVD2955T4G is based on the concept of the electric field effect. When a voltage is applied to the gate terminal, it attracts or repels electrons in the FET channel, depending on the type of FET. N-channel FETs, such as the SVD2955T4G, attract electrons when a positive voltage is applied, which creates an electrically conductive channel between the source and drain terminals. This allows current to flow through the transistor. When the voltage applied to the gate is zero, the channel is open, allowing current to flow freely.
As a voltage is applied between the source and drain terminals, the current flowing through the channel is controlled by the voltage applied to the gate terminal. This allows the SVD2955T4G to be used for purposes such as switching, amplification, and voltage regulation.
In summary, the SVD2955T4G is a single-gate MOSFET transistor that is specifically designed for use in low power electronic circuits. It is capable of handling a maximum of 400mA of current and a maximum voltage of 30V. It is commonly used in power switching, voltage regulation, motor control, and high-frequency switching applications. It works by controlling the amount of current flowing through its channel depending on the voltage applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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