T2N7002BK,LM Allicdata Electronics

T2N7002BK,LM Discrete Semiconductor Products

Allicdata Part #:

T2N7002BKLMTR-ND

Manufacturer Part#:

T2N7002BK,LM

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 0.4A SOT23
More Detail: N-Channel 60V 400mA (Ta) 320mW (Ta) Surface Mount ...
DataSheet: T2N7002BK,LM datasheetT2N7002BK,LM Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02032
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: U-MOSVII-H
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
FET Feature: --
Power Dissipation (Max): 320mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The T2N7002BK and LM are two types of power transistors that are used in a variety of applications. They are both single-ended, field-effect transistors (FETs). The T2N7002BK is classified as a p-type field-effect transistor (PFET) while the LM is an n-type field-effect transistor (NFET).

These two types of power transistors have a few common features. First, both of them use the same gate electrode for controlling the electrical current. Secondly, both types have a drain-source resistance that can be used to regulate the current flow in the circuit, and a gate-to-drain voltage that controls the conduction of the transistor. Lastly, they both use a body contact to control the current and turn the device on and off.

Working Principle

FETs like the T2N7002BK and LM work by using a principle called “field-effect.” This means that the gate electrode is used to control the electric field around the channel. When the electric field is increased, it causes charges to move towards the channel, creating a channel between the source and drain. This channel allows current to flow through the device. By controlling the electric field, the current can be regulated.

When the drain-source and gate-drain voltages increase, the electric field is strengthened and current starts to flow through the channel. Once the voltages reach a certain point indicate on the data-sheet, the FET reaches its maximum current and the channel is completely open. Similarly, if the voltages decrease, the electric field around the channel weakens, and the current decreases accordingly.

Applications

The T2N7002BK and LM are typically used in power switching applications. They are designed to switch high voltages and currents, meaning they are excellent for controlling the power flow in a circuit. Their ability to be turned on and off quickly make them ideal for use in switching power supplies, DC-DC converters, motor drivers and relay controllers.

The T2N7002BK and LM can also be used in amplifier applications. They are able to provide a large amount of gain because of their low output resistance and high transconductance. This makes them suitable for use as voltage amplifiers, current sources and power amplifiers.

In addition, they can be used in logic gates, gate drivers and level shifters. They are able to operate at high frequencies and are fast enough to be used in timing circuits and clock generators. Lastly, they can be used in analog-to-digital converters to convert analog signals into digital signals.

Conclusion

The T2N7002BK and LM are two types of power transistors that are used in a variety of applications. They work by using the “field-effect” principle, where the gate electrode is used to control the electric field around the channel. They can be used for switching high voltages and currents, amplifier applications, logic gates and much more.

The specific data is subject to PDF, and the above content is for reference

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