Allicdata Part #: | TA6F15AHM3/6B-ND |
Manufacturer Part#: |
TA6F15AHM3/6B |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 12.8V 21.2V DO221AC |
More Detail: | N/A |
DataSheet: | TA6F15AHM3/6B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 21.2V |
Supplier Device Package: | DO-221AC (SlimSMA) |
Package / Case: | DO-221AC, SMA Flat Leads |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 185°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 28.3A |
Series: | Automotive, AEC-Q101, PAR® |
Voltage - Breakdown (Min): | 14.3V |
Voltage - Reverse Standoff (Typ): | 12.8V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS diodes, also known as transient voltage suppressors, are components used to protect electronic circuits from voltage transients. These devices provide protection from a variety of sources, including lightning, electrical induction, electrostatic discharge, and electrical faults. The TA6F15AHM3/6B is a unidirectional TVS diode with a low operating voltage and high operating current.
The TA6F15AHM3/6B is designed specifically for automotive applications, such as engine compartment and powertrain components. The device is also suitable for other applications which require high ESD protection and low operating voltage, such as smartphones, computers, and other consumer electronics. The diode is available in a 3-pin SOT23 package and features a 30V breakdown voltage, 5A peak surge current, and 5PPR dissipative pulse capability.
The most important function of a TVS diode is to provide electrical protection against voltage transients. These transients occur when high voltage and current pulses are being applied to an electrical circuit, which can cause damage to the components in the circuit. The TA6F15AHM3/6B is designed to protect the circuit from such type of transients.
The working principle of this device is based on the Avalanche Breakdown effect. This phenomenon occurs when an electrical current is passed through a semiconductor material at a sufficient voltage level. The voltage across the diode increases exponentially as the current is increased, and eventually reaches a breakdown voltage level, known as the Avalanche Breakdown Voltage (ABV). When the ABV is reached, the diode damages itself and the resultant current is then absorbed by the diode.
This process clamps the voltage across the diode at the ABV, effectively preventing any further increase in voltage. This reduces the amount of power dissipated as heat and also prevents any damage being caused to the components in the circuit. The TA6F15AHM3/6B has a low ABV of 30V and can dissipate up to 5PPR of electrical pulse energy.
In summary, the TA6F15AHM3/6B is a unidirectional TVS diode which is specifically designed for automotive applications and other related devices. The device provides protection against high voltage transients. It works on the principle of Avalanche Breakdown effect and helps to reduce power dissipation as heat, while also protecting the device from any further damage.
The specific data is subject to PDF, and the above content is for reference
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TA6F16AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
TA6F18AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
TA6F20AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 17.1V 27.7V DO2... |
TA6F22AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
TA6F24AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
TA6F27AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
TA6F30AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 25.6V 41.4V DO2... |
TA6F33AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
TA6F36AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 30.8V 49.9V DO2... |
TA6F39AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 33.3V 53.9V DO2... |
TA6F43AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
TA6F47AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
TA6F51AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
TA6F6.8AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 5.8V 10.5V DO22... |
TA6F7.5AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 6.4V 11.3V DO22... |
TA6F8.2AHM3_A/I | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 7.02V 12.1V DO2... |
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TA6F43AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
TA6F33AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
TA6F8.2AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V DO2... |
TA6F22AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 18.8V 30.6V DO2... |
TA6F27AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
TA6F18AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
TA6F24AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
TA6F12AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
TA6F6.8AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V DO22... |
TA6F51AHM3/6A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
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TA6F11AHM3_A/H | Vishay Semic... | 0.13 $ | 1000 | TVS DIODE 9.4V 15.6V DO22... |
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