Allicdata Part #: | TFZGTR13B-ND |
Manufacturer Part#: |
TFZGTR13B |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 13V 500MW TUMD2 |
More Detail: | Zener Diode 13V 500mW Surface Mount TUMD2 |
DataSheet: | TFZGTR13B Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05594 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 13V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 14 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 10V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The TFZGTR13B is a single, Zener diode designed for various application fields and working principles. This device is suitable for use as protection circuits, clamping and voltage divider networks. It is a popular component used in a wide range of applications due to its capability of providing extremely accurate output voltage and load regulation, as well as low noise levels and low leakage current.
Application Fields
The TFZGTR13B can be used in a variety of application fields due to its excellent performance characteristics. In the industrial sector, it is used as protection devices against overvoltage, as a clamping device, or as a voltage regulator. Additionally, it can be used in the automotive industry as an automotive-grade temperature compensated Zener diode. It is also a suitable component for assembling Telecommunications and Computers equipment displays, as well as for universal motor-driver applications.
Working Principle
The working principle of the TFZGTR13B consists of four basic stages. Firstly, when a forward bias is applied, hole injection takes place from the anode to the cathode side. This allows for current conduction in the device. In the next stage, current injection from the collector to the anode occurs, resulting in Voltage Drop. The third stage is the reverse breakdown, which occurs when the voltage across the diode reaches the peak reverse voltage level (PRV). Finally, when the applied reverse bias is removed, the current injected from the collector decreases, thus causing the current to cease at the device level.
Advantages
The TFZGTR13B offers several key advantages compared to other Zener diode devices. Firstly, it has a reverse breakdown voltage that is extremely accurate and can be used to provide serial voltage regulation with a maximum error of only 0.1V. Additionally, the device is temperature stable with an extremely low noise level and low leakage current. Consequently, it has good temperature compensation performance which is important when implementing circuits. Finally, the package type provided by the manufacturer is robust, enabling reliable and safe operation.
Conclusion
In summary, the TFZGTR13B is a single, Zener diode which can be used in a wide range of application fields and is suitable for protection circuits, clamping and voltage divider networks. The device offers numerous key advantages including an extremely accurate reverse breakdown voltage, excellent temperature stability, low noise level and low leakage current. Therefore, the TFZGTR13B is an ideal choice for a number of applications due to its reliability and performance characteristics.
The specific data is subject to PDF, and the above content is for reference
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